IRFS3207PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFS3207PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 170 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 120 nS
   Cossⓘ - Capacitancia de salida: 710 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: TO-263

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IRFS3207PBF Datasheet (PDF)

..1. Size:378K international rectifier
irfs3207pbf.pdf

PD - 95708DIRFB3207PbFIRFS3207PbFIRFSL3207PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 75Vl High Speed Power Switchingl Hard Switched and High Frequency Circuits RDS(on) typ. 3.6mG max. 4.5mBenefitsSID 170Al Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

6.1. Size:326K international rectifier
irfb3207zpbf irfs3207zpbf irfsl3207zpbf.pdf

IRFB3207ZPbFIRFS3207ZPbFIRFSL3207ZPbFHEXFET Power MOSFETApplicationsDVDSS 75Vl High Efficiency Synchronous Rectification inSMPS RDS(on) typ. 3.3ml Uninterruptible Power Supply max. 4.1mGl High Speed Power SwitchingID (Silicon Limited) 170Al Hard Switched and High Frequency CircuitsS ID (Package Limited) 120ABenefitsDDl Improved Gate, Avalanche and Dynamic

6.2. Size:704K infineon
auirfs3207z auirfsl3207z.pdf

AUIRFS3207Z AUTOMOTIVE GRADE AUIRFSL3207Z HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 3.3m Ultra Low On-Resistance max. 4.1m 175C Operating Temperature Fast Switching ID (Silicon Limited) 170A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 120A Lead-Free, RoHS Compliant

6.3. Size:379K infineon
irfb3207 irfs3207 irfsl3207.pdf

PD - 96893CIRFB3207IRFS3207IRFSL3207ApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 75Vl High Speed Power Switching3.6mRDS(on) typ.l Hard Switched and High Frequency CircuitsGBenefits max. 4.5ml Worldwide Best RDS(on) in TO-220SID 180Al Improved Gate, Avalanche and Dynamic dV/dtRuggedn

6.4. Size:330K infineon
irfb3207zpbf irfs3207zpbf irfsl3207zpbf.pdf

6.5. Size:258K inchange semiconductor
irfs3207.pdf

Isc N-Channel MOSFET Transistor IRFS3207FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

6.6. Size:240K inchange semiconductor
irfs3207z.pdf

Isc N-Channel MOSFET Transistor IRFS3207ZFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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