IRFS3806PBF Todos los transistores

 ..1. Size:564K  international rectifier
 irfb3806pbf irfs3806pbf irfsl3806pbf.pdf

PD - 97310 IRFB3806PbF IRFS3806PbF Applications IRFSL3806PbF l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 60V l Hard Switched and High Frequency Circuits RDS(on) typ. 12.6m G max. 15.8m Benefits ID 43A S l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully C

 6.1. Size:738K  infineon
 auirfs3806.pdf

AUTOMOTIVE GRADE AUIRFS3806 HEXFET Power MOSFET Features VDSS 60V Advanced Process Technology RDS(on) typ. 12.6m 175 C Operating Temperature Fast Switching max. 15.8m Repetitive Avalanche Allowed up to Tjmax ID 43A Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed for Automotive applications

 6.2. Size:252K  inchange semiconductor
 irfs3806.pdf

isc N-Channel MOSFET Transistor IRFS3806 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 8.1. Size:336K  international rectifier
 irfb38n20dpbf irfs38n20dpbf.pdf

PD - 97001C IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Applications Key Parameters l High frequency DC-DC converters VDS 200 V l Plasma Display Panel VDS (Avalanche) min. 260 V Benefits RDS(ON) max @ 10V m 54 l Low Gate-to-Drain Charge to TJ max 175 C Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify De

 8.2. Size:133K  international rectifier
 irfs38n20d.pdf

PD - 94358 IRFB38N20D IRFS38N20D SMPS MOSFET IRFSL38N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.054 44A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current

 8.3. Size:583K  infineon
 irfb38n20dpbf irfs38n20dpbf irfsl38n20dpbf.pdf

IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Key Parameters Applications High frequency DC-DC converters VDS 200 V Plasma Display Panel VDS(Avalanche) min. 260 V RDS(on) max @ 10V 54 m Benefits TJ max 175 C Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS D D D

 8.4. Size:258K  inchange semiconductor
 irfs38n20d.pdf

Isc N-Channel MOSFET Transistor IRFS38N20D FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo