IRFS4010PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFS4010PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 375 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 180 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 86 nS

Cossⓘ - Capacitancia de salida: 660 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0047 Ohm

Encapsulados: TO-263

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IRFS4010PBF datasheet

 ..1. Size:292K  international rectifier
 irfs4010pbf irfsl4010pbf.pdf pdf_icon

IRFS4010PBF

PD - 96186A IRFS4010PbF IRFSL4010PbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 3.9m l High Speed Power Switching G max. 4.7m l Hard Switched and High Frequency Circuits ID 180A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Ca

 6.1. Size:313K  international rectifier
 irfs4010-7ppbf.pdf pdf_icon

IRFS4010PBF

PD - 97343 IRFS4010-7PPbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 3.3m l High Speed Power Switching G max. 4.0m l Hard Switched and High Frequency Circuits ID 190A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedness l Fully Characterized Capacitance and

 6.2. Size:711K  infineon
 auirfs4010 auirfsl4010.pdf pdf_icon

IRFS4010PBF

AUIRFS4010 AUTOMOTIVE GRADE AUIRFSL4010 HEXFET Power MOSFET VDSS 100V Features Advanced Process Technology RDS(on) typ. 3.9m Ultra Low On-Resistance max. 4.7m 175 C Operating Temperature Fast Switching ID 180A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * Description S S

 6.3. Size:702K  infineon
 auirfs4010-7p.pdf pdf_icon

IRFS4010PBF

AUTOMOTIVE GRADE AUIRFS4010-7P HEXFET Power MOSFET VDSS 100V Features RDS(on) typ. 3.3m Advanced Process Technology Ultra Low On-Resistance max. 4.0m Enhanced dV/dT and dI/dT capability ID 190A 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualifie

MOSTRAR MÁS

Otros transistores... IRFS3307PBF, IRFS3307ZPBF, IRFS33N15DPBF, IRFS3507PBF, IRFS3607PBF, IRFS3806PBF, IRFS38N20DPBF, IRFS4010-7PPBF, IRF530, IRFS4020PBF, IRFS4115-7PPBF, IRFS4115PBF, IRFS4127PBF, IRFS41N15DPBF, IRFS4227PBF, IRFS4228PBF, IRFS4229PBF