STB13N60M2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STB13N60M2
Código: 13N60M2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 110 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 25 V
Corriente continua de drenaje |Id|: 11 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 17 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 32 pF
Resistencia entre drenaje y fuente RDS(on): 0.38 Ohm
Paquete / Cubierta: D2PAK
Búsqueda de reemplazo de MOSFET STB13N60M2
STB13N60M2 Datasheet (PDF)
stb13n60m2 std13n60m2.pdf
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STB13NK60ZT4, STP13NK60ZSTP13NK60ZFP, STW13NK60ZN-channel 600 V, 0.48 , 13 A, TO-220, TO-220FP, D2PAKTO-247 Zener-protected SuperMESH Power MOSFETFeaturesRDS(on) Type VDSS ID Pwmax332STB13NK60ZT4 600 V
stb13nk60zt4 stw13nk60z stp13nk60zfp.pdf
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stb13nm60n std13nm60n.pdf
STB13NM60N, STD13NM60NN-channel 600 V, 0.28 typ., 11 A MDmesh II Power MOSFETs in DPAK and DPAK packagesDatasheet production dataFeatures Order code VDS (@Tjmax) RDS(on) max IDSTB13NM60NTAB650 V 0.36 11 ATABSTD13NM60N3 100% avalanche tested31 1 Low input capacitance and gate chargeDPAKDPAK Low gate input resistanceApplications
stb13nm50n-1 stb13nm50n stf13nm50n stp13nm50n stw13nm50n.pdf
STB13NM50N/-1 - STF13NM50NSTP13NM50N - STW13NM50NN-channel 500 V - 0.250 - 12 A MDmesh II Power MOSFETTO-220 - TO-247 - TO-220FP - I2PAK - D2PAKFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB13NM50N 550 V 0.32 12 ATO-220 IPAKSTB13NM50N-1 550 V 0.32 12 ASTF13NM50N 550 V 0.32 12 A(1) 321STP13NM50N 550 V 0.32 12 ATO-247STW13N
stb13nm50n stf13nm50n stp13nm50n stw13nm50n.pdf
STB13NM50N/-1 - STF13NM50NSTP13NM50N - STW13NM50NN-channel 500 V - 0.250 - 12 A MDmesh II Power MOSFETTO-220 - TO-247 - TO-220FP - I2PAK - D2PAKFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB13NM50N 550 V 0.32 12 ATO-220 IPAKSTB13NM50N-1 550 V 0.32 12 ASTF13NM50N 550 V 0.32 12 A(1) 321STP13NM50N 550 V 0.32 12 ATO-247STW13N
stb13nm60n std13nm60n stf13nm60n stp13nm60n stw13nm60n.pdf
STB13NM60N,STD13NM60N,STF13NM60NSTP13NM60N,STW13NM60NN-channel 600 V, 0.28 , 11 A MDmesh II Power MOSFETin D2PAK, DPAK, TO-220FP, TO-220, TO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) max3322STB13NM60N 650 V
stb13n80k5 stf13n80k5 stp13n80k5 stw13n80k5.pdf
STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5N-channel 800 V, 0.37 typ., 12 A SuperMESH 5 PowerMOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeatures TABOrder codes VDS RDS(on) ID PTOT31STB13N80K5 190 W3D2PAK21STF13N80K5 35 WTO-220FP800 V 0.45 12 ATABSTP13N80K5190 WSTW13N80K5 Worldwide best FOM (figur
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