STB15N80K5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5N-channel 800 V, 0.3 typ., 14 A MDmesh K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABOrder code VDS RDS(on)max ID PTOT3STB15N80K5 190 W132 STF15N80K5 35 WD2PAK1800 V 0.375 14 ATO-220FPSTP15N80K5190 WTABSTW15N80K5 Industrys lowest RDS(on)

Isc N-Channel MOSFET Transistor STB15N80K5FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

STF15NM65N-STI15NM65N-STW15NM65NSTB15NM65N-STP15NM65NN-channel 650V - 0.25 - 15.5A - TO-220/FP - D2/I2PAK - TO-247Second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) Max ID(@Tjmax)323121STB15NM65N 710 V

STP15NK50Z/FP - STB15NK50ZSTB15NK50Z-1 - STW15NK50ZN-channel 500V - 0.30 - 14A TO-220/FP/D2PAK/I2PAK/TO-247Zener-protected SuperMESH Power MOSFETGeneral featuresType VDSS RDS(on) ID Pw3STP15NK50Z 500V

STB15NM60ND - STF/I15NM60NDSTP15NM60ND - STW15NM60NDN-channel 600 V - 0.27 - 14 A - FDmesh II Power MOSFETD2PAK, I2PAK, TO-220, TO-220FP, TO-247Features Type VDSS (@Tjmax)RDS(on) max ID3 3STB15NM60ND 14 A 211STF15NM60ND 14 AD2PAKIPAKSTI15NM60ND 650 V 0.299 14 A(1)321STP15NM60ND 14 ASTW15NM60ND 14 ATO-2471. Limited only by maximum temperature

STB15N65M5, STD15N65M5DatasheetN-channel 650 V, 0.308 typ., 11 A MDmesh M5 Power MOSFETs in D2PAK and DPAK packagesFeaturesTABTABVDS @RDS(on) max. IDOrder codeTJmax32213STB15N65M51710 V 0.34 11 AD2PAK DPAKSTD15N65M5 Extremely low RDS(on)D(2, TAB) Low gate charge and input capacitance Excellent switching performance 100% aval

STB15NM60N - STF/I15NM60NSTP15NM60N - STW15NM60NN-channel 600V - 0.270 - 14A - D2/I2PAK - TO-220/FP - TO-247Second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)31 21STB15NM60N 650V

STP15NK50Z/FP - STB15NK50ZSTB15NK50Z-1 - STW15NK50ZN-channel 500V - 0.30 - 14A TO-220/FP/D2PAK/I2PAK/TO-247Zener-protected SuperMESH Power MOSFETGeneral featuresType VDSS RDS(on) ID Pw3STP15NK50Z 500V

STP15NK50Z/FP - STB15NK50ZSTB15NK50Z-1 - STW15NK50ZN-channel 500V - 0.30 - 14A TO-220/FP/D2PAK/I2PAK/TO-247Zener-protected SuperMESH Power MOSFETGeneral featuresType VDSS RDS(on) ID Pw3STP15NK50Z 500V

STB15NM60ND - STF/I15NM60NDSTP15NM60ND - STW15NM60NDN-channel 600 V - 0.27 - 14 A - FDmesh II Power MOSFETD2PAK, I2PAK, TO-220, TO-220FP, TO-247Features Type VDSS (@Tjmax)RDS(on) max ID3 3STB15NM60ND 14 A 211STF15NM60ND 14 AD2PAKIPAKSTI15NM60ND 650 V 0.299 14 A(1)321STP15NM60ND 14 ASTW15NM60ND 14 ATO-2471. Limited only by maximum temperature

STB15NM60N - STF/I15NM60NSTP15NM60N - STW15NM60NN-channel 600V - 0.270 - 14A - D2/I2PAK - TO-220/FP - TO-247Second generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)31 21STB15NM60N 650V

STB15N25N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTB15N25 250 V

isc N-Channel MOSFET Transistor STB15NM60NDDESCRIPTIONDrain Current: I =14A@ T =25D CDrain Source Voltage:: V = 600V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switching applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0