STB16NM50N Todos los transistores

 

STB16NM50N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STB16NM50N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
   Paquete / Cubierta: D2PAK

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STB16NM50N Datasheet (PDF)

 ..1. Size:577K  st
stb16nm50n stf16nm50n sti16nm50n stp16nm50n stw16nm50n.pdf

STB16NM50N
STB16NM50N

STB16NM50N - STF/I16NM50NSTP16NM50N - STW16NM50NN-channel 500 V - 0.21 - 15 A MDmesh II Power MOSFETD2PAK - I2PAK - TO-220 - TO-247- TO-220FPFeaturesVDSS RDS(on) Type ID3(@Tjmax) max31 21STB16NM50N 550 V 0.26 15 ADPAKIPAKSTI16NM50N 550 V 0.26 15 A3STF16NM50N 550 V 0.26 15 A (1)21STP16NM50N 550 V 0.26 15 ATO-247STW16NM50N 550

 ..2. Size:574K  st
stb16nm50n stf16nm50n sti16nm50n stp16nm50n stw16nm50n.pdf

STB16NM50N
STB16NM50N

STB16NM50N - STF/I16NM50NSTP16NM50N - STW16NM50NN-channel 500 V - 0.21 - 15 A MDmesh II Power MOSFETD2PAK - I2PAK - TO-220 - TO-247- TO-220FPFeaturesVDSS RDS(on) Type ID3(@Tjmax) max31 21STB16NM50N 550 V 0.26 15 ADPAKIPAKSTI16NM50N 550 V 0.26 15 A3STF16NM50N 550 V 0.26 15 A (1)21STP16NM50N 550 V 0.26 15 ATO-247STW16NM50N 550

 8.1. Size:294K  st
stb16nk65z-s stp16nk65z.pdf

STB16NM50N
STB16NM50N

STP16NK65ZSTB16NK65Z-SN-CHANNEL 650V - 0.38 - 13A TO-220 / I2SPAKZener - Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTP16NK65Z 650 V

 8.2. Size:469K  st
stb16ns25.pdf

STB16NM50N
STB16NM50N

STB16NS25N-CHANNEL 250V - 0.23 - 16AD2PAKMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTB16NS25 250 V

 8.3. Size:399K  st
stb16nf06lt4.pdf

STB16NM50N
STB16NM50N

STB16NF06LN-channel 60V - 0.07 - 16A - D2PAKSTripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB16NF06L 60V

 8.4. Size:54K  st
stb16nb25.pdf

STB16NM50N
STB16NM50N

STB16NB25N - CHANNEL 250V - 0.220 - 16 A - TO-263PowerMESH MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTB16NB25 250 V

 8.5. Size:348K  st
stb16ns25t4.pdf

STB16NM50N
STB16NM50N

STB16NS25N-CHANNEL 250V - 0.23 - 16AD2PAKMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTB16NS25 250 V

 8.6. Size:338K  st
stp16nk65z stb16nk65z-s.pdf

STB16NM50N
STB16NM50N

STP16NK65ZSTB16NK65Z-SN-CHANNEL 650V - 0.38 - 13A TO-220 / I2SPAKZener - Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTP16NK65Z 650 V

 8.7. Size:408K  st
stb16nf06l.pdf

STB16NM50N
STB16NM50N

STB16NF06LN-channel 60V - 0.07 - 16A - D2PAKSTripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB16NF06L 60V

 8.8. Size:1032K  st
stb16n65m5 std16n65m5.pdf

STB16NM50N
STB16NM50N

STB16N65M5STD16N65M5N-channel 650 V, 0.270 , 12 A MDmesh V Power MOSFETin DPAK, DPAKFeaturesVDSS @ RDS(on) Type IDTJmax max.STB16N65M5710 V

 8.9. Size:115K  st
stb16ne06.pdf

STB16NM50N
STB16NM50N

STB60NE06-16N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETTYPE V R IDSS DS(on) DSTB60NE06-1 60 V

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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