STB21N90K5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STB21N90K5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 18.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 27 nS
Cossⓘ - Capacitancia de salida: 112 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.299 Ohm
Paquete / Cubierta: D2PAK
Búsqueda de reemplazo de MOSFET STB21N90K5
STB21N90K5 Datasheet (PDF)
stb21n90k5.pdf
STB21N90K5, STF21N90K5, STP21N90K5,STW21N90K5N-channel 900 V, 0.25 typ., 18.5 A Zener-protected SuperMESH 5Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABOrder codes VDSS RDS(on)max ID PW331STB21N90K5 250 W 21D2PAKTO-220FPSTF21N90K5 40 W900 V
stb21n90k5 stf21n90k5 stp21n90k5 stw21n90k5.pdf
STB21N90K5, STF21N90K5, STP21N90K5,STW21N90K5N-channel 900 V, 0.25 typ., 18.5 A Zener-protected SuperMESH 5Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABOrder codes VDSS RDS(on)max ID PW331STB21N90K5 250 W 21D2PAKTO-220FPSTF21N90K5 40 W900 V
stb21nk50z.pdf
STB21NK50ZN-channel 500 V, 0.23 , 17 A, D2PAKZener-protected superMESH Power MOSFETFeaturesRDS(on) Type VDSS ID PwmaxSTB21NK50Z 500 V
stp21nm60n stf21nm60n stb21nm60n stb21nm60n-1 stw21nm60n.pdf
STP21NM60N-F21NM60N-STW21NM60NSTB21NM60N-STB21NM60N-1N-channel 600 V - 0.17 - 17 A TO-220 - TO-220FP - D2PAK -I2PAK - TO-247 second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID(@Tjmax) max3332 121STB21NM60N 650 V
stb21nm60n-1 stb21nm60n stf21nm60n stp21nm60n stw21nm60n.pdf
STP21NM60N-F21NM60N-STW21NM60NSTB21NM60N-STB21NM60N-1N-channel 600 V - 0.17 - 17 A TO-220 - TO-220FP - D2PAK -I2PAK - TO-247 second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID(@Tjmax) max3332 121STB21NM60N 650 V
stp21nm60nd stf21nm60nd stb21nm60nd sti21nm60nd stw21nm60nd.pdf
STP/F21NM60ND-STW21NM60NDSTB21NM60ND-STI21NM60NDN-channel 600 V, 0.17 , 17 A FDmesh II Power MOSFETD2PAK, I2PAK, TO-220FP, TO-220, TO-247FeaturesVDSS @ RDS(on) Type IDTJmax max 33 13221STB21NM60ND 650 V
stp21nm50n stf21nm50n stb21nm50n stb21nm50n-1 stw21nm50n.pdf
STP/F21NM50N - STW21NM50NSTB21NM50N - STB21NM50N-1N-channel 500V - 0.15 - 18A TO-220/FP/D2/I2PAK/TO-247Second generation MDmesh Power MOSFETGeneral featuresVDSSType RDS(on) ID3(@Tjmax)3 132211STB21NM50N 550V
stb21nm60nd stf21nm60nd stp21nm60nd stw21nm60nd.pdf
STB21NM60ND, STF21NM60ND, STP21NM60ND, STW21NM60NDN-channel 600 V, 0.17 typ., 17 A FDmesh II Power MOSFET in DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDSS @ RDS(on) Order codes IDTJmax max331 21STB21NM60ND 650 V 0.22 17 AD2PAK TO-220FPSTF21NM60ND 650 V 0.22 17 ASTP21NM60ND 650 V 0.22 17 ATABSTW21NM60N
stb21n65m5 stf21n65m5 sti21n65m5 stp21n65m5 stw21n65m5.pdf
STB21N65M5, STF21N65M5STI21N65M5, STP21N65M5, STW21N65M5N-channel 650 V, 0.175 , 17 A MDmesh V Power MOSFETD2PAK, TO-220FP, TO-220, I2PAK, TO-247FeaturesVDSS @ RDS(on) Type ID PWTJmax max3231STB21N65M5 17 A 125 W 21TO-220STF21N65M5 17 A(1) 30 WIPAKSTI21N65M5 710 V
stb21nm50n-1 stb21nm50n stf21nm50n stp21nm50n.pdf
STP/F21NM50N - STW21NM50NSTB21NM50N - STB21NM50N-1N-channel 500V - 0.15 - 18A TO-220/FP/D2/I2PAK/TO-247Second generation MDmesh Power MOSFETGeneral featuresVDSSType RDS(on) ID3(@Tjmax)3 132211STB21NM50N 550V
stb21nm60nd.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STB21NM60NDFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
stb21n65m5.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor STB21N65M5FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIM
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918