IRFS4410ZPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFS4410ZPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 230 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 97 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 52 nS
Cossⓘ - Capacitancia de salida: 340 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Encapsulados: TO-263
Búsqueda de reemplazo de IRFS4410ZPBF MOSFET
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IRFS4410ZPBF datasheet
irfb4410zpbf irfs4410zpbf irfsl4410zpbf.pdf
IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications D VDSS l High Efficiency Synchronous Rectification in SMPS 100V l Uninterruptible Power Supply RDS(on) typ. 7.2m l High Speed Power Switching G max. 9.0m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 97A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness D l
auirfs4410z auirfsl4410z.pdf
PD - 96405A AUTOMOTIVE GRADE AUIRFS4410Z AUIRFSL4410Z Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l 175 C Operating Temperature D VDSS 100V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) typ. 7.2m l Lead-Free, RoHS Compliant max. 9.0m G l Automotive Qualified * ID 97A S Description Specifically desig
irfs4410z.pdf
Isc N-Channel MOSFET Transistor IRFS4410Z FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol
irfb4410pbf irfs4410pbf irfsl4410pbf.pdf
PD - 95707E IRFB4410PbF IRFS4410PbF IRFSL4410PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching RDS(on) typ. 8.0m l Hard Switched and High Frequency Circuits G max. 10m ID S 88A Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized
Otros transistores... STB9NK50Z-1, STB9NK50ZT4, STB9NK60Z-1, STB9NK60ZDT4, STB9NK60ZT4, STB9NK70ZT4, STB9NK80Z, IRFS4410PBF, AON7410, IRFS4510PBF, IRFS460, IRFS4610PBF, IRFS4615PBF, IRFS4620PBF, IRFS4710, IRFS4710PBF, IRFS52N15DPBF
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