IRFS4620PBF Todos los transistores

 ..1. Size:359K  international rectifier
 irfs4620pbf irfsl4620pbf.pdf

PD -96203 IRFS4620PbF IRFSL4620PbF HEXFET Power MOSFET Applications D VDSS 200V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 63.7m l High Speed Power Switching G max. 77.5m l Hard Switched and High Frequency Circuits ID 24A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Cap

 6.1. Size:257K  inchange semiconductor
 irfs4620.pdf

Isc N-Channel MOSFET Transistor IRFS4620 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

 8.1. Size:340K  international rectifier
 auirfs4610trl.pdf

PD - 96325 AUTOMOTIVE GRADE AUIRFB4610 AUIRFS4610 Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance V(BR)DSS 100V Enhanced dV/dT and dI/dT capability RDS(on) typ. 11m 175 C Operating Temperature Fast Switching max. 14m G Repetitive Avalanche Allowed up to Tjmax ID 73A Lead-Free, RoHS Compliant S Automotive Qualified * D Descripti

 8.2. Size:365K  international rectifier
 irfs4615pbf irfsl4615pbf.pdf

PD -96202 IRFS4615PbF IRFSL4615PbF HEXFET Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 34.5m l High Speed Power Switching G max. 42m l Hard Switched and High Frequency Circuits ID 33A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Capac

 8.3. Size:399K  international rectifier
 irfb4610pbf irfs4610pbf irfsl4610pbf.pdf

PD - 95936C IRFB4610PbF IRFS4610PbF IRFSL4610PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching 11m RDS(on) typ. l Hard Switched and High Frequency Circuits G max. 14m ID 73A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

 8.4. Size:381K  international rectifier
 irfb4610 irfs4610 irfsl4610.pdf

PD - 96906B IRFB4610 IRFS4610 IRFSL4610 Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching 11m RDS(on) typ. l Hard Switched and High Frequency Circuits G max. 14m Benefits l Improved Gate, Avalanche and Dynamic dV/dt ID 73A S Ruggedness l Fully Characterized Capacita

 8.5. Size:231K  fairchild semi
 irfs460.pdf

IRFS460 FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.25 Rugged Gate Oxide Technology Lower Input Capacitance ID = 12.4 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 0.197 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charact

 8.6. Size:717K  infineon
 auirfb4610 auirfs4610.pdf

AUIRFB4610 AUTOMOTIVE GRADE AUIRFS4610 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Enhanced dV/dT and dI/dT capability 175 C Operating Temperature max. 14m Fast Switching ID 73A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive

 8.7. Size:258K  inchange semiconductor
 irfs4610.pdf

Isc N-Channel MOSFET Transistor IRFS4610 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

 8.8. Size:257K  inchange semiconductor
 irfs4615.pdf

Isc N-Channel MOSFET Transistor IRFS4615 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt