IRFSL3107PBF Todos los transistores

 

IRFSL3107PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFSL3107PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 370 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 195 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 110 nS
   Cossⓘ - Capacitancia de salida: 840 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
   Paquete / Cubierta: TO-262
     - Selección de transistores por parámetros

 

IRFSL3107PBF Datasheet (PDF)

 ..1. Size:371K  international rectifier
irfs3107pbf irfsl3107pbf.pdf pdf_icon

IRFSL3107PBF

PD -97144AIRFS3107PbFIRFSL3107PbFHEXFET Power MOSFETApplicationsDVDSS75Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.5m:l Uninterruptible Power Supplyl High Speed Power Switching max. 3.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)230A cID (Package Limited)195A SBenefitsl Improved Gate, Avalanche and Dyn

 ..2. Size:214K  inchange semiconductor
irfsl3107pbf.pdf pdf_icon

IRFSL3107PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFSL3107PbFFEATURESWith TO-262(DPAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

 5.1. Size:716K  infineon
auirfs3107 auirfsl3107.pdf pdf_icon

IRFSL3107PBF

AUIRFS3107 AUTOMOTIVE GRADE AUIRFSL3107 HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 2.5m Ultra Low On-Resistance max. 3.0m Enhanced dV/dT and dI/dT capability 175C Operating Temperature ID (Silicon Limited) 230A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up t

 7.1. Size:290K  international rectifier
irfb31n20dpbf irfs31n20dp irfsl31n20dp.pdf pdf_icon

IRFSL3107PBF

IRFB31N20DPbFSMPS MOSFETIRFS31N20DPbFIRFSL31N20DPbFAppIications HEXFET Power MOSFETl High Frequency DC-DC convertersl Lead-FreeVDSS RDS(on) max ID200V 0.082 31ABenefitsl Low Gate to Drain to Reduce SwitchingLossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design,(SeeAN 1001)l Fully Characterized Avalanche Voltageand Cur

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STD50NH02L-1 | MTN50N06E3 | SSFT4004 | STS2601 | CPC3730 | IPI051N15N5 | SM3116NAF

 

 
Back to Top

 


 
.