IRFSL3207 Todos los transistores

 

IRFSL3207 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFSL3207
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 330 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 180 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 120 nS
   Cossⓘ - Capacitancia de salida: 710 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: TO-262
     - Selección de transistores por parámetros

 

IRFSL3207 Datasheet (PDF)

 ..1. Size:379K  international rectifier
irfsl3207.pdf pdf_icon

IRFSL3207

PD - 96893CIRFB3207IRFS3207IRFSL3207ApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 75Vl High Speed Power Switching3.6mRDS(on) typ.l Hard Switched and High Frequency CircuitsGBenefits max. 4.5ml Worldwide Best RDS(on) in TO-220SID 180Al Improved Gate, Avalanche and Dynamic dV/dtRuggedn

 ..2. Size:379K  international rectifier
irfb3207 irfs3207 irfsl3207.pdf pdf_icon

IRFSL3207

PD - 96893CIRFB3207IRFS3207IRFSL3207ApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 75Vl High Speed Power Switching3.6mRDS(on) typ.l Hard Switched and High Frequency CircuitsGBenefits max. 4.5ml Worldwide Best RDS(on) in TO-220SID 180Al Improved Gate, Avalanche and Dynamic dV/dtRuggedn

 0.1. Size:330K  international rectifier
irfb3207zpbf irfs3207zpbf irfsl3207zpbf.pdf pdf_icon

IRFSL3207

IRFB3207ZPbFIRFS3207ZPbFIRFSL3207ZPbFHEXFET Power MOSFETApplicationsDVDSS 75Vl High Efficiency Synchronous Rectification inSMPS RDS(on) typ. 3.3ml Uninterruptible Power Supply max. 4.1mGl High Speed Power SwitchingID (Silicon Limited) 170Al Hard Switched and High Frequency CircuitsS ID (Package Limited) 120ABenefitsDDl Improved Gate, Avalanche and Dynamic

 0.2. Size:704K  infineon
auirfs3207z auirfsl3207z.pdf pdf_icon

IRFSL3207

AUIRFS3207Z AUTOMOTIVE GRADE AUIRFSL3207Z HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 3.3m Ultra Low On-Resistance max. 4.1m 175C Operating Temperature Fast Switching ID (Silicon Limited) 170A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 120A Lead-Free, RoHS Compliant

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK2931 | FQPF13N50C

 

 
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