IRFSL3307ZPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFSL3307ZPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 230 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 64 nS
Cossⓘ - Capacitancia de salida: 420 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0058 Ohm
Paquete / Cubierta: TO-262
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IRFSL3307ZPBF Datasheet (PDF)
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PD - 97214DIRFB3307ZPbFIRFS3307ZPbFApplicationsIRFSL3307ZPbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power Switching D VDSS75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.4.6m max. 5.8mGID (Silicon Limited)128ABenefitsID (Package Limited)120ASl Improved Gate, Av
irfb3307zpbf irfs3307zpbf irfsl3307zpbf.pdf
PD - 97214DIRFB3307ZPbFIRFS3307ZPbFApplicationsIRFSL3307ZPbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power Switching D VDSS75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.4.6m max. 5.8mGID (Silicon Limited)128ABenefitsID (Package Limited)120ASl Improved Gate, Av
auirfs3307z auirfsl3307z.pdf
AUIRFS3307Z AUTOMOTIVE GRADE AUIRFSL3307Z HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 4.6m Ultra Low On-Resistance max. 5.8m 175C Operating Temperature Fast Switching ID (Silicon Limited) 128A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 120A Lead-Free, RoHS Compliant
irfb3306pbf irfs3306pbf irfsl3306pbf.pdf
IRFB3306PbFIRFS3306PbFIRFSL3306PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPS VDSS60Vl Uninterruptible Power SupplyRDS(on) typ.3.3ml High Speed Power Switching max. 4.2ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 160A BenefitsID (Package Limited)120A Sl Improved Gate, Avalanche and Dynamic dV/
irfb3306pbf irfs3306pbf irfsl3306pbf.pdf
IRFB3306PbFIRFS3306PbFIRFSL3306PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPS VDSS60Vl Uninterruptible Power SupplyRDS(on) typ.3.3ml High Speed Power Switching max. 4.2ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 160A BenefitsID (Package Limited)120A Sl Improved Gate, Avalanche and Dynamic dV/
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918