IRFSL4228PBF Todos los transistores

 

IRFSL4228PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFSL4228PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 330 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 83 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 59 nS

Cossⓘ - Capacitancia de salida: 550 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm

Encapsulados: TO-262

 Búsqueda de reemplazo de IRFSL4228PBF MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRFSL4228PBF datasheet

 ..1. Size:371K  international rectifier
irfs4228pbf irfsl4228pbf.pdf pdf_icon

IRFSL4228PBF

PD - 97231A IRFS4228PbF PDP SWITCH IRFSL4228PbF Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for PDP VDS min 150 V Sustain, Energy Recovery and Pass VDS (Avalanche) typ. 180 V Switch Applications RDS(ON) typ. @ 10V m 12 l Low EPULSE Rating to Reduce Power IRP max @ TC= 100 C 170 A Dissipation in PDP Sustain, Energy TJ max 175 C Reco

 6.1. Size:357K  international rectifier
irfs4227pbf irfsl4227pbf.pdf pdf_icon

IRFSL4228PBF

PD - 96131A IRFS4227PbF PDP SWITCH IRFSL4227PbF Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, VDS (Avalanche) typ. 240 V Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 22 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 130 A and Pass Switch

 6.2. Size:275K  international rectifier
irfsl4229pbf.pdf pdf_icon

IRFSL4228PBF

PD - 96285 IRFSL4229PbF Features Key Parameters l Advanced Process Technology VDS min 250 V l Low QG for Fast Response l High Repetitive Peak Current Capability for VDS (Avalanche) typ. 300 V Reliable Operation RDS(ON) typ. @ 10V m 42 l Short Fall & Rise Times for Fast Switching IRP max @ TC= 100 C 91 A l175 C Operating Junction Temperature for TJ max 175 C Improved Ru

 6.3. Size:269K  inchange semiconductor
irfsl4227.pdf pdf_icon

IRFSL4228PBF

isc N-Channel MOSFET Transistor IRFSL4227 FEATURES Static drain-source on-resistance RDS(on) 22m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 200 V DSS V Gate-Source Vo

Otros transistores... IRFSL3607PBF , IRFSL3806PBF , IRFSL38N20DPBF , IRFSL4010PBF , IRFSL4020PBF , IRFSL4115PBF , IRFSL4127PBF , IRFSL4227PBF , 50N06 , IRFSL4229PBF , IRFSL4310PBF , IRFSL4310ZPBF , IRFSL4321PBF , IRFSL4410PBF , IRFSL4410ZPBF , IRFSL4510PBF , IRFSL4610PBF .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10 | AUD069N10A | AUD062N08BG | AUD060N08AG | AUD060N055 | AUD056N08BGL | AUB062N08BG

 

 

 

Popular searches

p75nf75 | d880 transistor | 2sc1845 | p60nf06 | 2sa1837 | ksc1845 transistor | irf630 datasheet | mpsa13 equivalent

 

 

↑ Back to Top
.