IRFSL4410PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFSL4410PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 200 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 88 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 120 nC
trⓘ - Tiempo de subida: 80 nS
Cossⓘ - Capacitancia de salida: 360 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
Paquete / Cubierta: TO-262
Búsqueda de reemplazo de MOSFET IRFSL4410PBF
IRFSL4410PBF Datasheet (PDF)
irfs4410pbf irfsl4410pbf.pdf
PD - 95707EIRFB4410PbFIRFS4410PbFIRFSL4410PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power SwitchingRDS(on) typ. 8.0ml Hard Switched and High Frequency CircuitsG max. 10mIDS 88ABenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized
irfb4410pbf irfs4410pbf irfsl4410pbf.pdf
PD - 95707EIRFB4410PbFIRFS4410PbFIRFSL4410PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power SwitchingRDS(on) typ. 8.0ml Hard Switched and High Frequency CircuitsG max. 10mIDS 88ABenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized
irfb4410zpbf irfs4410zpbf irfsl4410zpbf.pdf
IRFB4410ZPbFIRFS4410ZPbFIRFSL4410ZPbFHEXFET Power MOSFETApplicationsDVDSSl High Efficiency Synchronous Rectification in SMPS 100Vl Uninterruptible Power SupplyRDS(on) typ.7.2ml High Speed Power SwitchingG max. 9.0ml Hard Switched and High Frequency CircuitsID (Silicon Limited)97ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessDl
auirfs4410z auirfsl4410z.pdf
PD - 96405AAUTOMOTIVE GRADEAUIRFS4410ZAUIRFSL4410ZFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel 175C Operating TemperatureDVDSS100Vl Fast Switchingl Repetitive Avalanche Allowed up to Tjmax RDS(on) typ.7.2ml Lead-Free, RoHS Compliant max. 9.0mGl Automotive Qualified *ID 97ASDescriptionSpecifically desig
irfb4410zpbf irfs4410zpbf irfsl4410zpbf.pdf
IRFB4410ZPbFIRFS4410ZPbFIRFSL4410ZPbFHEXFET Power MOSFETApplicationsDVDSSl High Efficiency Synchronous Rectification in SMPS 100Vl Uninterruptible Power SupplyRDS(on) typ.7.2ml High Speed Power SwitchingG max. 9.0ml Hard Switched and High Frequency CircuitsID (Silicon Limited)97ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessDl
irfb4410 irfs4410 irfsl4410.pdf
PD - 96902CIRFB4410IRFS4410IRFSL4410ApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS100Vl High Speed Power SwitchingRDS(on) typ.8.0ml Hard Switched and High Frequency CircuitsG max. 10mBenefitsID96Al Improved Gate, Avalanche and Dynamic dV/dtSRuggednessl Fully Characterized Capacita
irfsl4410.pdf
isc N-Channel MOSFET Transistor IRFSL4410FEATURESStatic drain-source on-resistance:RDS(on) 10mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
irfsl4410z.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFSL4410ZFEATURESStatic drain-source on-resistance:RDS(on) 9.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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