IRFSL4710 Todos los transistores

 ..1. Size:663K  international rectifier
 irfb4710pbf irfs4710pbf irfsl4710pbf.pdf

PD- 95146 IRFB4710PbF IRFS4710PbF IRFSL4710PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.014 75A Motor Control Uninterrutible Power Supplies Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-2

 ..2. Size:195K  international rectifier
 irfs4710 irfsl4710.pdf

PD- 94080 IRFB4710 IRFS4710 IRFSL4710 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.014 75A Motor Control Uninterrutible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262

 ..3. Size:233K  inchange semiconductor
 irfsl4710.pdf

Isc N-Channel MOSFET Transistor IRFSL4710 FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 10

 8.1. Size:371K  international rectifier
 irfs4228pbf irfsl4228pbf.pdf

PD - 97231A IRFS4228PbF PDP SWITCH IRFSL4228PbF Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for PDP VDS min 150 V Sustain, Energy Recovery and Pass VDS (Avalanche) typ. 180 V Switch Applications RDS(ON) typ. @ 10V m 12 l Low EPULSE Rating to Reduce Power IRP max @ TC= 100 C 170 A Dissipation in PDP Sustain, Energy TJ max 175 C Reco

 8.2. Size:799K  international rectifier
 irfb4410pbf irfs4410pbf irfsl4410pbf.pdf

PD - 95707E IRFB4410PbF IRFS4410PbF IRFSL4410PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching RDS(on) typ. 8.0m l Hard Switched and High Frequency Circuits G max. 10m ID S 88A Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

 8.3. Size:359K  international rectifier
 irfs4620pbf irfsl4620pbf.pdf

PD -96203 IRFS4620PbF IRFSL4620PbF HEXFET Power MOSFET Applications D VDSS 200V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 63.7m l High Speed Power Switching G max. 77.5m l Hard Switched and High Frequency Circuits ID 24A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Cap

 8.4. Size:324K  international rectifier
 irfb4310zpbf irfs4310zpbf irfsl4310zpbf.pdf

PD - 97115D IRFB4310ZPbF IRFS4310ZPbF IRFSL4310ZPbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 127A c ID (Package Limited) 120A S Benefits l Improved Gate,

 8.5. Size:376K  international rectifier
 irfb4310pbf irfs4310pbf irfsl4310pbf.pdf

PD - 14275D IRFB4310PbF IRFS4310PbF IRFSL4310PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 5.6m G max. 7.0m ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

 8.6. Size:256K  international rectifier
 irfs4510pbf irfsl4510pbf.pdf

PD - 97771 IRFS4510PbF IRFSL4510PbF HEXFET Power MOSFET D Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 11.3m l Uninterruptible Power Supply l High Speed Power Switching G max. 13.9m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 61A S Benefits D l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedness l

 8.7. Size:289K  international rectifier
 auirfs4410z auirfsl4410z.pdf

PD - 96405A AUTOMOTIVE GRADE AUIRFS4410Z AUIRFSL4410Z Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l 175 C Operating Temperature D VDSS 100V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) typ. 7.2m l Lead-Free, RoHS Compliant max. 9.0m G l Automotive Qualified * ID 97A S Description Specifically desig

 8.8. Size:292K  international rectifier
 irfs4010pbf irfsl4010pbf.pdf

PD - 96186A IRFS4010PbF IRFSL4010PbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 3.9m l High Speed Power Switching G max. 4.7m l Hard Switched and High Frequency Circuits ID 180A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Ca

 8.9. Size:330K  international rectifier
 irfb4410zpbf irfs4410zpbf irfsl4410zpbf.pdf

IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications D VDSS l High Efficiency Synchronous Rectification in SMPS 100V l Uninterruptible Power Supply RDS(on) typ. 7.2m l High Speed Power Switching G max. 9.0m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 97A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness D l

 8.10. Size:365K  international rectifier
 irfs4615pbf irfsl4615pbf.pdf

PD -96202 IRFS4615PbF IRFSL4615PbF HEXFET Power MOSFET Applications D VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 34.5m l High Speed Power Switching G max. 42m l Hard Switched and High Frequency Circuits ID 33A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Capac

 8.11. Size:286K  international rectifier
 irfs4115pbf irfsl4115pbf.pdf

PD - 96198A IRFS4115PbF IRFSL4115PbF HEXFET Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply RDS(on) typ. 10.3m l High Speed Power Switching max. 12.1m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 99A Benefits ID (Package Limited) 195A S l Improved Gate, Avalanche and Dynamic

 8.12. Size:353K  international rectifier
 irfs4321pbf irfsl4321pbf.pdf

PD - 97105C IRFS4321PbF IRFSL4321PbF Applications HEXFET Power MOSFET l Motion Control Applications VDSS 150V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 12m l Hard Switched and High Frequency Circuits max. 15m Benefits 85A c ID l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching D Performance D D

 8.13. Size:285K  international rectifier
 auirfsl4115.pdf

AUIRFS4115 AUTOMOTIVE GRADE AUIRFSL4115 HEXFET Power MOSFET Features D VDSS 150V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) typ. 10.3m l 175 C Operating Temperature l Fast Switching G max. 12.1m l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant ID 99A l Automotive Qualified * S D Description D Specifically designed for A

 8.14. Size:357K  international rectifier
 irfs4227pbf irfsl4227pbf.pdf

PD - 96131A IRFS4227PbF PDP SWITCH IRFSL4227PbF Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, VDS (Avalanche) typ. 240 V Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 22 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 130 A and Pass Switch

 8.15. Size:331K  international rectifier
 irfs4020pbf irfsl4020pbf.pdf

PD - 97393 IRFS4020PbF DIGITAL AUDIO MOSFET IRFSL4020PbF Features Key Parameters Key parameters optimized for Class-D audio VDS 200 V amplifier applications m RDS(ON) typ. @ 10V 85 Low RDSON for improved efficiency Qg typ. 18 nC Low QG and QSW for better THD and improved Qsw typ. 6.7 nC RG(int) typ. efficiency 3.2 TJ max 175 C Low QRR for better

 8.16. Size:355K  international rectifier
 irfs4127pbf irfsl4127pbf.pdf

PD - 96177 IRFS4127PbF IRFSL4127PbF HEXFET Power MOSFET Applications D VDSS 200V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 18.6m l High Speed Power Switching G max. 22m l Hard Switched and High Frequency Circuits ID 72A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D D l Fully Characterized Capa

 8.17. Size:399K  international rectifier
 irfb4610pbf irfs4610pbf irfsl4610pbf.pdf

PD - 95936C IRFB4610PbF IRFS4610PbF IRFSL4610PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching 11m RDS(on) typ. l Hard Switched and High Frequency Circuits G max. 14m ID 73A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

 8.18. Size:799K  international rectifier
 irfs4410pbf irfsl4410pbf.pdf

PD - 95707E IRFB4410PbF IRFS4410PbF IRFSL4410PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching RDS(on) typ. 8.0m l Hard Switched and High Frequency Circuits G max. 10m ID S 88A Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized

 8.19. Size:381K  international rectifier
 irfb4610 irfs4610 irfsl4610.pdf

PD - 96906B IRFB4610 IRFS4610 IRFSL4610 Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching 11m RDS(on) typ. l Hard Switched and High Frequency Circuits G max. 14m Benefits l Improved Gate, Avalanche and Dynamic dV/dt ID 73A S Ruggedness l Fully Characterized Capacita

 8.20. Size:275K  international rectifier
 irfsl4229pbf.pdf

PD - 96285 IRFSL4229PbF Features Key Parameters l Advanced Process Technology VDS min 250 V l Low QG for Fast Response l High Repetitive Peak Current Capability for VDS (Avalanche) typ. 300 V Reliable Operation RDS(ON) typ. @ 10V m 42 l Short Fall & Rise Times for Fast Switching IRP max @ TC= 100 C 91 A l175 C Operating Junction Temperature for TJ max 175 C Improved Ru

 8.21. Size:802K  international rectifier
 irfb4410 irfs4410 irfsl4410.pdf

PD - 96902C IRFB4410 IRFS4410 IRFSL4410 Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply D VDSS 100V l High Speed Power Switching RDS(on) typ. 8.0m l Hard Switched and High Frequency Circuits G max. 10m Benefits ID 96A l Improved Gate, Avalanche and Dynamic dV/dt S Ruggedness l Fully Characterized Capacita

 8.22. Size:708K  infineon
 irfb41n15dpbf irfib41n15dpbf irfs41n15dpbf irfsl41n15dpbf.pdf

IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters VDSS 150V Benefits RDS(on) max 0.045 Low Gate-to-Drain Charge to Reduce Switching Losses ID 41A Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. D D Note AN1001) Fully Characteri

 8.23. Size:711K  infineon
 auirfs4010 auirfsl4010.pdf

AUIRFS4010 AUTOMOTIVE GRADE AUIRFSL4010 HEXFET Power MOSFET VDSS 100V Features Advanced Process Technology RDS(on) typ. 3.9m Ultra Low On-Resistance max. 4.7m 175 C Operating Temperature Fast Switching ID 180A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * Description S S

 8.24. Size:712K  infineon
 auirfs4310 auirfsl4310.pdf

AUIRFS4310 AUTOMOTIVE GRADE AUIRFSL4310 HEXFET Power MOSFET Features VDSS 100V Advanced Process Technology RDS(on) typ. 5.6m Ultra Low On-Resistance max. 7.0m 175 C Operating Temperature Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Au

 8.25. Size:722K  infineon
 auirfs4115 auirfsl4115.pdf

AUIRFS4115 AUTOMOTIVE GRADE AUIRFSL4115 HEXFET Power MOSFET VDSS 150V Features Advanced Process Technology RDS(on) typ. 10.3m Ultra Low On-Resistance max. 12.1m 175 C Operating Temperature Fast Switching ID 99A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * Description S S

 8.26. Size:255K  inchange semiconductor
 irfsl41n15d.pdf

Isc N-Channel MOSFET Transistor IRFS41N15D FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 1

 8.27. Size:256K  inchange semiconductor
 irfsl4321.pdf

Isc N-Channel MOSFET Transistor IRFSL4321 FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 15

 8.28. Size:246K  inchange semiconductor
 irfsl4115.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFSL4115 FEATURES With TO-262 packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

 8.29. Size:286K  inchange semiconductor
 irfsl4310 .pdf

isc N-Channel MOSFET Transistor IRFSL4310 FEATURES Static drain-source on-resistance RDS(on) 7.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

 8.30. Size:269K  inchange semiconductor
 irfsl4227.pdf

isc N-Channel MOSFET Transistor IRFSL4227 FEATURES Static drain-source on-resistance RDS(on) 22m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 200 V DSS V Gate-Source Vo

 8.31. Size:286K  inchange semiconductor
 irfsl4610.pdf

isc N-Channel MOSFET Transistor IRFSL4610 FEATURES Static drain-source on-resistance RDS(on) 13.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

 8.32. Size:286K  inchange semiconductor
 irfsl4410.pdf

isc N-Channel MOSFET Transistor IRFSL4410 FEATURES Static drain-source on-resistance RDS(on) 10m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

 8.33. Size:255K  inchange semiconductor
 irfsl4310.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFSL4310 FEATURES Static drain-source on-resistance RDS(on) 7.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T

 8.34. Size:255K  inchange semiconductor
 irfsl4615.pdf

Isc N-Channel MOSFET Transistor IRFS4615 FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150

 8.35. Size:261K  inchange semiconductor
 irfsl4410z.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFSL4410Z FEATURES Static drain-source on-resistance RDS(on) 9.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T

 8.36. Size:224K  inchange semiconductor
 irfsl4620.pdf

Isc N-Channel MOSFET Transistor IRFSL4620 FEATURES With To-262(I2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

 8.37. Size:286K  inchange semiconductor
 irfsl4510.pdf

isc N-Channel MOSFET Transistor IRFSL4510 FEATURES Static drain-source on-resistance RDS(on) 13.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

 8.38. Size:188K  inchange semiconductor
 irfsl4127.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFSL4127 FEATURES With To-262(I2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE