IRFSL7734PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFSL7734PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 290 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 183 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.7 V
   Qgⓘ - Carga de la puerta: 180 nC
   trⓘ - Tiempo de subida: 123 nS
   Cossⓘ - Capacitancia de salida: 816 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
   Paquete / Cubierta: TO-262

Búsqueda de reemplazo de MOSFET IRFSL7734PBF

IRFSL7734PBF Datasheet (PDF)

..1. Size:650K international rectifier
irfb7734 irfs7734pbf irfsl7734pbf.pdf

StrongIRFET IRFB7734PbF IRFS7734PbF IRFSL7734PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.8m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.5m Resonant mode power supp

..2. Size:653K infineon
irfb7734pbf irfs7734pbf irfsl7734pbf.pdf

6.1. Size:657K international rectifier
irfb7730 irfs7730pbf irfsl7730pbf.pdf

StrongIRFET IRFB7730PbF IRFS7730PbF IRFSL7730PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.2m Half-bridge and full-bridge topologies max 2.6mG Synchronous rectifier applications ID (Silicon Limited) 246A

6.2. Size:657K infineon
irfb7730pbf irfs7730pbf irfsl7730pbf.pdf

7.1. Size:667K international rectifier
irfb7787 irfs7787pbf irfsl7787pbf.pdf

StrongIRFET IRFB7787PbF IRFS7787PbF IRFSL7787PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 75V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 6.9m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 8.4m Resonant mode power suppl

7.2. Size:610K international rectifier
irfs7762 irfsl7762pbf.pdf

StrongIRFET IRFS7762PbF IRFSL7762PbF HEXFET Power MOSFET Application Brushed motor drive applications DVDSS 75V BLDC motor drive applications Battery powered circuits RDS(on) typ. 5.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 6.7m Resonant mode power supplies SID 8

7.3. Size:613K infineon
irfs7762pbf irfsl7762pbf.pdf

7.4. Size:985K infineon
irfb7787pbf irfs7787pbf irfsl7787pbf.pdf

7.5. Size:271K inchange semiconductor
irfsl7762.pdf

Isc N-Channel MOSFET Transistor IRFSL7762FEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75

7.6. Size:287K inchange semiconductor
irfsl7787.pdf

isc N-Channel MOSFET Transistor IRFSL7787FEATURESStatic drain-source on-resistance:RDS(on) 8.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous Rectifier applicationsResonant mode power suppliesBattery powered circuitsABSOLUTE MAXIM

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