IRFU1010ZPBF MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRFU1010ZPBF datasheet

..1. Size:328K international rectifier
irfr1010zpbf irfu1010zpbf.pdf pdf_icon

PD - 95951A IRFR1010ZPbF IRFU1010ZPbF Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 7.5m G Lead-Free ID = 42A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re

5.1. Size:261K inchange semiconductor
irfu1010z.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFU1010Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

7.1. Size:368K international rectifier
irfr1018epbf irfu1018epbf.pdf pdf_icon

PD - 97129A IRFR1018EPbF IRFU1018EPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS D VDSS 60V l Uninterruptible Power Supply RDS(on) typ. 7.1m l High Speed Power Switching max. 8.4m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 79A c ID (Package Limited) S 56A Benefits l Improved Gate, Avalanche and Dyna

7.2. Size:261K inchange semiconductor
irfu1018e.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFU1018E FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

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