IRFU1010ZPBF Todos los transistores

 

IRFU1010ZPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFU1010ZPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 140 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 42 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 76 nS
   Cossⓘ - Capacitancia de salida: 470 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
   Paquete / Cubierta: TO-251
 

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IRFU1010ZPBF Datasheet (PDF)

 ..1. Size:328K  international rectifier
 irfr1010zpbf irfu1010zpbf.pdf pdf_icon

IRFU1010ZPBF

PD - 95951AIRFR1010ZPbFIRFU1010ZPbFFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 7.5mG Lead-FreeID = 42ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re

 5.1. Size:261K  inchange semiconductor
 irfu1010z.pdf pdf_icon

IRFU1010ZPBF

isc N-Channel MOSFET Transistor IRFU1010ZFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

 7.1. Size:368K  international rectifier
 irfr1018epbf irfu1018epbf.pdf pdf_icon

IRFU1010ZPBF

PD - 97129AIRFR1018EPbFIRFU1018EPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification inSMPS D VDSS60Vl Uninterruptible Power SupplyRDS(on) typ.7.1m:l High Speed Power Switchingmax. 8.4m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)79A cID (Package Limited)S 56A Benefitsl Improved Gate, Avalanche and Dyna

 7.2. Size:261K  inchange semiconductor
 irfu1018e.pdf pdf_icon

IRFU1010ZPBF

isc N-Channel MOSFET Transistor IRFU1018EFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

MOSTRAR MÁS

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