IRFU2405PBF Todos los transistores

 

IRFU2405PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFU2405PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 110 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 56 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 70 nC
   trⓘ - Tiempo de subida: 130 nS
   Cossⓘ - Capacitancia de salida: 470 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: TO-251

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IRFU2405PBF Datasheet (PDF)

 ..1. Size:221K  international rectifier
irfr2405pbf irfu2405pbf.pdf

IRFU2405PBF
IRFU2405PBF

PD - 95369AIRFR2405PbFIRFU2405PbFl Surface Mount (IRFR2405)HEXFET Power MOSFETl Straight Lead (IRFU2405)l Advanced Process TechnologyDVDSS = 55Vl Dynamic dv/dt Ratingl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.016Gl Lead-FreeDescriptionID = 56ASeventh Generation HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processing

 ..2. Size:221K  infineon
irfr2405pbf irfu2405pbf.pdf

IRFU2405PBF
IRFU2405PBF

PD - 95369AIRFR2405PbFIRFU2405PbFl Surface Mount (IRFR2405)HEXFET Power MOSFETl Straight Lead (IRFU2405)l Advanced Process TechnologyDVDSS = 55Vl Dynamic dv/dt Ratingl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.016Gl Lead-FreeDescriptionID = 56ASeventh Generation HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processing

 6.1. Size:261K  inchange semiconductor
irfu2405.pdf

IRFU2405PBF
IRFU2405PBF

isc N-Channel MOSFET Transistor IRFU2405FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 7.1. Size:381K  infineon
irfr2407pbf irfu2407pbf.pdf

IRFU2405PBF
IRFU2405PBF

PD-95033AIRFR2407PbFIRFU2407PbF Lead-Freewww.irf.com 112/10/04IRFR/U2407PbF2 www.irf.comIRFR/U2407PbFwww.irf.com 3IRFR/U2407PbF4 www.irf.comIRFR/U2407PbFwww.irf.com 5IRFR/U2407PbF6 www.irf.comIRFR/U2407PbFwww.irf.com 7IRFR/U2407PbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking Informat

 7.2. Size:134K  infineon
irfr2407 irfu2407.pdf

IRFU2405PBF
IRFU2405PBF

PD -93862IRFR2407IRFU2407HEXFET Power MOSFET Surface Mount (IRFR2407) Straight Lead (IRFU2407)D Advanced Process Technology VDSS = 75V Dynamic dv/dt Rating Fast SwitchingRDS(on) = 0.026G Fully Avalanche RatedDescriptionID = 42A Seventh Generation HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processingtechniques to achieve extremel

 7.3. Size:261K  inchange semiconductor
irfu2407.pdf

IRFU2405PBF
IRFU2405PBF

isc N-Channel MOSFET Transistor IRFU2407FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

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