IRFU2607ZPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFU2607ZPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 110 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 42 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 59 nS
Cossⓘ - Capacitancia de salida: 190 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
Encapsulados: TO-251
Búsqueda de reemplazo de IRFU2607ZPBF MOSFET
- Selecciónⓘ de transistores por parámetros
IRFU2607ZPBF datasheet
..1. Size:336K international rectifier
irfu2607zpbf.pdf 
PD - 95953A IRFR2607ZPbF IRFU2607ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 22m Lead-Free G Description ID = 42A S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resist
..2. Size:347K international rectifier
irfr2607zpbf irfu2607zpbf.pdf
PD - 95953 IRFR2607ZPbF AUTOMOTIVE MOSFET IRFU2607ZPbF Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 75V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 22m l Lead-Free G Description ID = 42A Specifically designed for Automotive applications, S this HEXFET Power MOSFET u
5.1. Size:261K inchange semiconductor
irfu2607z.pdf
isc N-Channel MOSFET Transistor IRFU2607Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
9.3. Size:256K 1
irfu220a irfr220a.pdf
IRFR/U220A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.6 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.626 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ra
9.7. Size:1880K international rectifier
irfr220pbf irfu220pbf.pdf
PD - 95069A IRFR220PbF IRFU220PbF Lead-Free 12/14/04 Document Number 91270 www.vishay.com 1 IRFR/U220PbF Document Number 91270 www.vishay.com 2 IRFR/U220PbF Document Number 91270 www.vishay.com 3 IRFR/U220PbF Document Number 91270 www.vishay.com 4 IRFR/U220PbF Document Number 91270 www.vishay.com 5 IRFR/U220PbF Document Number 91270 www.vishay.com 6 IRFR/U2
9.8. Size:336K international rectifier
irfr2905zpbf irfu2905zpbf.pdf
PD - 95943B IRFR2905ZPbF IRFU2905ZPbF Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 14.5m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 42A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re
9.9. Size:381K international rectifier
irfr2407pbf irfu2407pbf.pdf
PD-95033A IRFR2407PbF IRFU2407PbF Lead-Free www.irf.com 1 12/10/04 IRFR/U2407PbF 2 www.irf.com IRFR/U2407PbF www.irf.com 3 IRFR/U2407PbF 4 www.irf.com IRFR/U2407PbF www.irf.com 5 IRFR/U2407PbF 6 www.irf.com IRFR/U2407PbF www.irf.com 7 IRFR/U2407PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Informat
9.10. Size:352K international rectifier
irfr2307zpbf irfu2307zpbf.pdf
PD - 96191B IRFR2307ZPbF IRFU2307ZPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 16m G Description ID = 42A This HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resi
9.11. Size:221K international rectifier
irfr2405pbf irfu2405pbf.pdf
PD - 95369A IRFR2405PbF IRFU2405PbF l Surface Mount (IRFR2405) HEXFET Power MOSFET l Straight Lead (IRFU2405) l Advanced Process Technology D VDSS = 55V l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated RDS(on) = 0.016 G l Lead-Free Description ID = 56A Seventh Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced processing
9.12. Size:1298K international rectifier
irfr210pbf irfu210pbf.pdf
PD - 95068A IRFR210PbF IRFU210PbF Lead-Free 12/9/04 Document Number 91268 www.vishay.com 1 IRFR/U210PbF Document Number 91268 www.vishay.com 2 IRFR/U210PbF Document Number 91268 www.vishay.com 3 IRFR/U210PbF Document Number 91268 www.vishay.com 4 IRFR/U210PbF Document Number 91268 www.vishay.com 5 IRFR/U210PbF Document Number 91268 www.vishay.com 6 IRFR/U21
9.13. Size:276K international rectifier
irfr24n15dpbf irfu24n15dpbf.pdf
PD - 95370B IRFR24N15DPbF IRFU24N15DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 95m 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak IRFR24N15DPbF IRFU24N15DPbF l Fully Characterized Avalanch
9.14. Size:523K international rectifier
irfr224pbf irfu224pbf.pdf
PD- 95237A IRFR224PbF IRFU224PbF Lead-Free 12/03/04 Document Number 91271 www.vishay.com 1 IRFR/U224PbF Document Number 91271 www.vishay.com 2 IRFR/U224PbF Document Number 91271 www.vishay.com 3 IRFR/U224PbF Document Number 91271 www.vishay.com 4 IRFR/U224PbF Document Number 91271 www.vishay.com 5 IRFR/U224PbF Document Number 91271 www.vishay.com 6 IRFR/U22
9.15. Size:134K international rectifier
irfr2407 irfu2407.pdf
PD -93862 IRFR2407 IRFU2407 HEXFET Power MOSFET Surface Mount (IRFR2407) Straight Lead (IRFU2407) D Advanced Process Technology VDSS = 75V Dynamic dv/dt Rating Fast Switching RDS(on) = 0.026 G Fully Avalanche Rated Description ID = 42A Seventh Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced processing techniques to achieve extremel
9.16. Size:1415K international rectifier
irfr214pbf irfu214pbf.pdf
PD- 95384A IRFR214PbF IRFU214PbF Lead-Free 12/3/04 Document Number 91269 www.vishay.com 1 IRFR/U214PbF Document Number 91269 www.vishay.com 2 IRFR/U214PbF Document Number 91269 www.vishay.com 3 IRFR/U214PbF Document Number 91269 www.vishay.com 4 IRFR/U214PbF Document Number 91269 www.vishay.com 5 IRFR/U214PbF Document Number 91269 www.vishay.com 6 IRFR/U214
9.17. Size:224K international rectifier
irfr220npbf irfu220npbf.pdf
PD- 95063A IRFR220NPbF SMPS MOSFET IRFU220NPbF HEXFET Power MOSFET Applications VDSS RDS(on) max (m ) ID l High frequency DC-DC converters 200V 600 5.0A l Lead-Free Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) D-Pak I-Pak l Fully Characterized Avalanche V
9.18. Size:733K fairchild semi
irfu220b.pdf
November 2001 IRFR220B / IRFU220B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.6A, 200V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to
9.19. Size:715K fairchild semi
irfr214b irfu214b.pdf
November 2001 IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.2A, 250V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.1 nC) planar, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored t
9.20. Size:655K fairchild semi
irfr210b irfu210b 2.pdf
November 2001 IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.7A, 200V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 7.2 nC) planar, DMOS technology. Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored t
9.21. Size:687K fairchild semi
irfu214b.pdf
November 2001 IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.2A, 250V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.1 nC) planar, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored t
9.22. Size:90K fairchild semi
irfu220.pdf
IRFR220, IRFU220 Data Sheet January 2002 4.6A, 200V, 0.800 Ohm, N-Channel Power Features MOSFETs 4.6A, 200V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.800 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown aval
9.23. Size:724K fairchild semi
irfr210b irfu210b.pdf
November 2001 IRFR210B / IRFU210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.7A, 200V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 7.2 nC) planar, DMOS technology. Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored t
9.25. Size:1442K vishay
irfr220 irfu220 sihfr220 sihfu220 2.pdf
IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.80 RoHS* Surface Mount (IRFR220/SiHFR220) Qg (Max.) (nC) 14 COMPLIANT Straight Lead (IRFU220/SiHFU220) Qgs (nC) 3.0 Available in Tape and Reel Qgd (nC) 7.9 Configuration Si
9.26. Size:797K vishay
irfr220pbf irfu220pbf sihfr220 sihfu220.pdf
IRFR220, IRFU220, SiHFR220, SiHFU220 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating VDS (V) 200 Repetitive avalanche rated RDS(on) ( )VGS = 10 V 0.80 Surface mount (IRFR220, SiHFR220) Straight lead (IRFU220, SiHFU220) Qg (Max.) (nC) 14 Available in tape and reel Qgs (nC) 3.0 Available Fast switching Qgd (nC) 7
9.27. Size:938K vishay
irfr224 irfu224 sihfr224 sihfu224.pdf
IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 1.1 Repetitive Avalanche Rated Qg (Max.) (nC) 14 Surface Mount (IRFR224, SiHFR224) Qgs (nC) 2.7 Straight Lead (IRFU224, SiHFU224) Available in Tape and Reel
9.28. Size:821K vishay
irfr210pbf irfu210pbf sihfr210 sihfu210.pdf
IRFR210, IRFU210, SiHFR210, SiHFU210 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.5 Surface Mount (IRFR210, SiHFR210) Qg (Max.) (nC) 8.2 Straight Lead (IRFU210, SiHFU210) Available in Tape and Reel Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Eas
9.29. Size:1537K vishay
irfr220 irfu220 sihfr220 sihfu220.pdf
IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.80 Repetitive Avalanche Rated Qg (Max.) (nC) 14 Surface Mount (IRFR220, SiHFR220) Qgs (nC) 3.0 Straight Lead (IRFU220, SiHFU220) Qgd (nC) 7.9 Available in T
9.30. Size:2021K vishay
irfr214 irfu214 sihfr214 sihfu214.pdf
IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 250 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 2.0 Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 Surface Mount (IRFR9210, SiHFR9210) Qgs (nC) 1.8 Straight Lead (IRFU9210, SiHFU9210) Qgd (nC) 4.5 Available
9.31. Size:351K vishay
irfr224pbf irfu224pbf sihfr224 sihfu224.pdf
IRFR224, IRFU224, SiHFR224, SiHFU224 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.1 Surface Mount (IRFR224, SiHFR224) Qg (Max.) (nC) 14 Straight Lead (IRFU224, SiHFU224) Qgs (nC) 2.7 Qgd (nC) 7.8 Available in Tape and Reel Configuration Single
9.32. Size:2066K vishay
irfr210 irfu210 sihfr210 sihfu210.pdf
IRFR210, IRFU210, SiHFR210, SiHFU210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 1.5 Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 Surface Mount (IRFR210, SiHFR210) Qgs (nC) 1.8 Straight Lead (IRFU210, SiHFU210) Qgd (nC) 4.5 Available in
9.33. Size:859K vishay
irfr214pbf irfu214pbf sihfr214 sihfu214.pdf
IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 Surface Mount (IRFR214, SiHFR214) Straight Lead (IRFU214, SiHFU214) Qg (Max.) (nC) 8.2 Available in Tape and Reel Qgs (nC) 1.8 Fast Switching Qgd (nC) 4.5 Eas
9.34. Size:821K cn vbsemi
irfu220npbf.pdf
IRFU220NPBF www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.270 at VGS = 10 V 8 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-251 APPLICATIONS Primary Side Switch D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIM
9.35. Size:261K inchange semiconductor
irfu2407.pdf
isc N-Channel MOSFET Transistor IRFU2407 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
9.36. Size:207K inchange semiconductor
irfu220b.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFU220B FEATURES With TO-251(IPAK) packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications DC-DC converters High freque
9.37. Size:296K inchange semiconductor
irfu224.pdf
iscN-Channel MOSFET Transistor IRFU224 FEATURES Low drain-source on-resistance RDS(ON) 1.1 @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
9.38. Size:261K inchange semiconductor
irfu2405.pdf
isc N-Channel MOSFET Transistor IRFU2405 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
9.39. Size:296K inchange semiconductor
irfu220.pdf
iscN-Channel MOSFET Transistor IRFU220 FEATURES Low drain-source on-resistance RDS(ON) 0.8 @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
9.40. Size:207K inchange semiconductor
irfu220n.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFU220N FEATURES With TO-251(IPAK) packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications DC-DC converters High freque
9.41. Size:296K inchange semiconductor
irfu214.pdf
iscN-Channel MOSFET Transistor IRFU214 FEATURES Low drain-source on-resistance RDS(ON) 2.0 @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
9.42. Size:261K inchange semiconductor
irfu2307z.pdf
isc N-Channel MOSFET Transistor IRFU2307Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
9.43. Size:261K inchange semiconductor
irfu24n15d.pdf
isc N-Channel MOSFET Transistor IRFU24N15D FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
9.44. Size:261K inchange semiconductor
irfu2905z.pdf
isc N-Channel MOSFET Transistor IRFU2905Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
Otros transistores... IRFU210PBF
, IRFU214B
, IRFU214PBF
, IRFU220NPBF
, IRFU220PBF
, IRFU224PBF
, IRFU2307ZPBF
, IRFU2405PBF
, 5N60
, IRFU2905ZPBF
, IRFU310PBF
, IRFU320PBF
, IRFU3410PBF
, IRFU3412PBF
, IRFU3418PBF
, IRFU3505PBF
, IRFU3518PBF
.
History: ZXMN6A09G
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