IRFU2905ZPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 95943BIRFR2905ZPbFIRFU2905ZPbFFeatures HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 14.5m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 42ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re

isc N-Channel MOSFET Transistor IRFU2905ZFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

IRFR/U220AAdvanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.6 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.626 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum Ra

PD - 95069AIRFR220PbFIRFU220PbF Lead-Free12/14/04Document Number: 91270 www.vishay.com1IRFR/U220PbFDocument Number: 91270 www.vishay.com2IRFR/U220PbFDocument Number: 91270 www.vishay.com3IRFR/U220PbFDocument Number: 91270 www.vishay.com4IRFR/U220PbFDocument Number: 91270 www.vishay.com5IRFR/U220PbFDocument Number: 91270 www.vishay.com6IRFR/U2

PD - 96191BIRFR2307ZPbFIRFU2307ZPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 16mGDescriptionID = 42AThis HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely lowon-resi

PD - 95369AIRFR2405PbFIRFU2405PbFl Surface Mount (IRFR2405)HEXFET Power MOSFETl Straight Lead (IRFU2405)l Advanced Process TechnologyDVDSS = 55Vl Dynamic dv/dt Ratingl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.016Gl Lead-FreeDescriptionID = 56ASeventh Generation HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processing

PD - 95953AIRFR2607ZPbFIRFU2607ZPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 22m Lead-FreeGDescription ID = 42ASThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resist

PD - 95068AIRFR210PbFIRFU210PbF Lead-Free12/9/04Document Number: 91268 www.vishay.com1IRFR/U210PbFDocument Number: 91268 www.vishay.com2IRFR/U210PbFDocument Number: 91268 www.vishay.com3IRFR/U210PbFDocument Number: 91268 www.vishay.com4IRFR/U210PbFDocument Number: 91268 www.vishay.com5IRFR/U210PbFDocument Number: 91268 www.vishay.com6IRFR/U21

PD- 95237AIRFR224PbFIRFU224PbF Lead-Free12/03/04Document Number: 91271 www.vishay.com1IRFR/U224PbFDocument Number: 91271 www.vishay.com2IRFR/U224PbFDocument Number: 91271 www.vishay.com3IRFR/U224PbFDocument Number: 91271 www.vishay.com4IRFR/U224PbFDocument Number: 91271 www.vishay.com5IRFR/U224PbFDocument Number: 91271 www.vishay.com6IRFR/U22

PD - 95953IRFR2607ZPbFAUTOMOTIVE MOSFETIRFU2607ZPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance Dl 175C Operating Temperature VDSS = 75Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 22ml Lead-FreeGDescriptionID = 42ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFET u

PD- 95384AIRFR214PbFIRFU214PbF Lead-Free12/3/04Document Number: 91269 www.vishay.com1IRFR/U214PbFDocument Number: 91269 www.vishay.com2IRFR/U214PbFDocument Number: 91269 www.vishay.com3IRFR/U214PbFDocument Number: 91269 www.vishay.com4IRFR/U214PbFDocument Number: 91269 www.vishay.com5IRFR/U214PbFDocument Number: 91269 www.vishay.com6IRFR/U214

PD- 95063AIRFR220NPbFSMPS MOSFET IRFU220NPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max (m) IDl High frequency DC-DC converters200V 600 5.0Al Lead-FreeBenefitsl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)D-Pak I-Pakl Fully Characterized Avalanche V

November 2001IRFR220B / IRFU220B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.6A, 200V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to

November 2001IRFR214B / IRFU214B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.2A, 250V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.1 nC)planar, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been especially tailored t

November 2001IRFR210B / IRFU210B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.7A, 200V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC)planar, DMOS technology. Low Crss ( typical 6.8 pF)This advanced technology has been especially tailored t

November 2001IRFR214B / IRFU214B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.2A, 250V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.1 nC)planar, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been especially tailored t

IRFR220, IRFU220Data Sheet January 20024.6A, 200V, 0.800 Ohm, N-Channel Power FeaturesMOSFETs 4.6A, 200VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.800power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown aval

November 2001IRFR210B / IRFU210B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.7A, 200V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC)planar, DMOS technology. Low Crss ( typical 6.8 pF)This advanced technology has been especially tailored t

IRFR220, IRFU220, SiHFR220, SiHFU220Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.80RoHS* Surface Mount (IRFR220/SiHFR220)Qg (Max.) (nC) 14 COMPLIANT Straight Lead (IRFU220/SiHFU220)Qgs (nC) 3.0 Available in Tape and ReelQgd (nC) 7.9Configuration Si

IRFR220, IRFU220, SiHFR220, SiHFU220www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt ratingVDS (V) 200 Repetitive avalanche ratedRDS(on) ()VGS = 10 V 0.80 Surface mount (IRFR220, SiHFR220) Straight lead (IRFU220, SiHFU220)Qg (Max.) (nC) 14 Available in tape and reelQgs (nC) 3.0Available Fast switchingQgd (nC) 7

IRFR224, IRFU224, SiHFR224, SiHFU224Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 250 Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 1.1 Repetitive Avalanche RatedQg (Max.) (nC) 14 Surface Mount (IRFR224, SiHFR224)Qgs (nC) 2.7 Straight Lead (IRFU224, SiHFU224) Available in Tape and Reel

IRFR210, IRFU210, SiHFR210, SiHFU210www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.5 Surface Mount (IRFR210, SiHFR210)Qg (Max.) (nC) 8.2 Straight Lead (IRFU210, SiHFU210) Available in Tape and ReelQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Eas

IRFR220, IRFU220, SiHFR220, SiHFU220Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200 Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.80 Repetitive Avalanche RatedQg (Max.) (nC) 14 Surface Mount (IRFR220, SiHFR220)Qgs (nC) 3.0 Straight Lead (IRFU220, SiHFU220)Qgd (nC) 7.9 Available in T

IRFR214, IRFU214, SiHFR214, SiHFU214Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 250Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 2.0 Repetitive Avalanche RatedQg (Max.) (nC) 8.2 Surface Mount (IRFR9210, SiHFR9210)Qgs (nC) 1.8 Straight Lead (IRFU9210, SiHFU9210)Qgd (nC) 4.5 Available

IRFR224, IRFU224, SiHFR224, SiHFU224www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.1 Surface Mount (IRFR224, SiHFR224)Qg (Max.) (nC) 14 Straight Lead (IRFU224, SiHFU224)Qgs (nC) 2.7Qgd (nC) 7.8 Available in Tape and Reel Configuration Single

IRFR210, IRFU210, SiHFR210, SiHFU210Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 1.5 Repetitive Avalanche RatedQg (Max.) (nC) 8.2 Surface Mount (IRFR210, SiHFR210)Qgs (nC) 1.8 Straight Lead (IRFU210, SiHFU210)Qgd (nC) 4.5 Available in

IRFR214, IRFU214, SiHFR214, SiHFU214www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0 Surface Mount (IRFR214, SiHFR214) Straight Lead (IRFU214, SiHFU214)Qg (Max.) (nC) 8.2 Available in Tape and ReelQgs (nC) 1.8 Fast SwitchingQgd (nC) 4.5 Eas

PD-95033AIRFR2407PbFIRFU2407PbF Lead-Freewww.irf.com 112/10/04IRFR/U2407PbF2 www.irf.comIRFR/U2407PbFwww.irf.com 3IRFR/U2407PbF4 www.irf.comIRFR/U2407PbFwww.irf.com 5IRFR/U2407PbF6 www.irf.comIRFR/U2407PbFwww.irf.com 7IRFR/U2407PbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking Informat

PD - 96191BIRFR2307ZPbFIRFU2307ZPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 16mGDescriptionID = 42AThis HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely lowon-resi

PD - 95369AIRFR2405PbFIRFU2405PbFl Surface Mount (IRFR2405)HEXFET Power MOSFETl Straight Lead (IRFU2405)l Advanced Process TechnologyDVDSS = 55Vl Dynamic dv/dt Ratingl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.016Gl Lead-FreeDescriptionID = 56ASeventh Generation HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processing

PD - 95370BIRFR24N15DPbF IRFU24N15DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters150V 95m 24ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)D-Pak I-PakIRFR24N15DPbF IRFU24N15DPbFl Fully Characterized Avalanch

PD -93862IRFR2407IRFU2407HEXFET Power MOSFET Surface Mount (IRFR2407) Straight Lead (IRFU2407)D Advanced Process Technology VDSS = 75V Dynamic dv/dt Rating Fast SwitchingRDS(on) = 0.026G Fully Avalanche RatedDescriptionID = 42A Seventh Generation HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processingtechniques to achieve extremel

PD- 95063AIRFR220NPbFSMPS MOSFET IRFU220NPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max (m) IDl High frequency DC-DC converters200V 600 5.0Al Lead-FreeBenefitsl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)D-Pak I-Pakl Fully Characterized Avalanche V

IRFU220NPBFwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature200 0.270 at VGS = 10 V 8 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTO-251APPLICATIONS Primary Side SwitchDGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIM

isc N-Channel MOSFET Transistor IRFU2407FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFU220BFEATURESWith TO-251(IPAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsDC-DC convertersHigh freque

iscN-Channel MOSFET Transistor IRFU224FEATURESLow drain-source on-resistance:RDS(ON) 1.1 @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

isc N-Channel MOSFET Transistor IRFU2607ZFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

isc N-Channel MOSFET Transistor IRFU2405FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

iscN-Channel MOSFET Transistor IRFU220FEATURESLow drain-source on-resistance:RDS(ON) 0.8 @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFU220NFEATURESWith TO-251(IPAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsDC-DC convertersHigh freque

iscN-Channel MOSFET Transistor IRFU214FEATURESLow drain-source on-resistance:RDS(ON) 2.0 @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

isc N-Channel MOSFET Transistor IRFU2307ZFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

isc N-Channel MOSFET Transistor IRFU24N15DFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE