IRFU3412PBF Todos los transistores

 

IRFU3412PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFU3412PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 140 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 48 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5.5 V

Carga de compuerta (Qg): 59 nC

Tiempo de elevación (tr): 68 nS

Conductancia de drenaje-sustrato (Cd): 270 pF

Resistencia drenaje-fuente RDS(on): 0.025 Ohm

Empaquetado / Estuche: TO-251

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IRFU3412PBF Datasheet (PDF)

1.1. irfu3412pbf.pdf Size:228K _upd

IRFU3412PBF
IRFU3412PBF

PD - 95498A IRFR3412PbF IRFU3412PbF SMPS MOSFET HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) VDSS RDS(on) max ID l Motor Drive 100V 0.025Ω 48A† l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D-Pak I-Pak l Fully Cha

3.1. irfu3418pbf.pdf Size:239K _upd

IRFU3412PBF
IRFU3412PBF

PD - 95516A IRFR3418PbF IRFU3418PbF HEXFET® Power MOSFET Applications VDSS RDS(on) Max ID l High frequency DC-DC converters l Lead-Free 14m 30A 80V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Current

3.2. irfu3410pbf.pdf Size:231K _upd

IRFU3412PBF
IRFU3412PBF

PD - 95514A IRFR3410PbF IRFU3410PbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 100V 39mΩ 31A† l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Cu

 3.3. irfu3411.pdf Size:261K _inchange_semiconductor

IRFU3412PBF
IRFU3412PBF

isc N-Channel MOSFET Transistor IRFU3411 ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UN

3.4. irfu3410.pdf Size:261K _inchange_semiconductor

IRFU3412PBF
IRFU3412PBF

isc N-Channel MOSFET Transistor IRFU3410 ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UN

Otros transistores... GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

 

 
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