IRFU3412PBF Todos los transistores

 

IRFU3412PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFU3412PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 140 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 48 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 68 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TO-251
     - Selección de transistores por parámetros

 

IRFU3412PBF Datasheet (PDF)

 ..1. Size:228K  international rectifier
irfr3412pbf irfu3412pbf.pdf pdf_icon

IRFU3412PBF

PD - 95498AIRFR3412PbFIRFU3412PbFSMPS MOSFETHEXFET Power MOSFETApplicationsl Switch Mode Power Supply (SMPS) VDSS RDS(on) max IDl Motor Drive100V 0.025 48Al Bridge Convertersl All Zero Voltage Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggedness D-Pak I-Pakl Fully Cha

 7.1. Size:230K  international rectifier
irfr3411pbf irfu3411pbf.pdf pdf_icon

IRFU3412PBF

PD - 95371AIRFR3411PbFl Advanced Process TechnologyIRFU3411PbFl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt Ratingl 175C Operating TemperatureDl Fast Switching VDSS = 100Vl Fully Avalanche Ratedl Lead-FreeRDS(on) = 44mGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 32ASRectifier utilize advanced processing techniques to

 7.2. Size:239K  international rectifier
irfr3418pbf irfu3418pbf.pdf pdf_icon

IRFU3412PBF

PD - 95516AIRFR3418PbF IRFU3418PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) Max IDl High frequency DC-DC convertersl Lead-Free 14m 30A80VBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pak I-Pakand Current

 7.3. Size:231K  international rectifier
irfr3410pbf irfu3410pbf.pdf pdf_icon

IRFU3412PBF

PD - 95514AIRFR3410PbF IRFU3410PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters100V 39m 31Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pak I-Pakand Cu

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: DMC3021LSD | DMN2170U | PJW1NA60 | 2SJ227 | STM9435 | SS05N70 | SML60J62

 

 
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