IRFU3412PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFU3412PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 140 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 48 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 68 nS
Cossⓘ - Capacitancia de salida: 270 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Paquete / Cubierta: TO-251
Búsqueda de reemplazo de IRFU3412PBF MOSFET
IRFU3412PBF datasheet
irfr3412pbf irfu3412pbf.pdf
PD - 95498A IRFR3412PbF IRFU3412PbF SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply (SMPS) VDSS RDS(on) max ID l Motor Drive 100V 0.025 48A l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D-Pak I-Pak l Fully Cha
irfr3411pbf irfu3411pbf.pdf
PD - 95371A IRFR3411PbF l Advanced Process Technology IRFU3411PbF l Ultra Low On-Resistance HEXFET Power MOSFET l Dynamic dv/dt Rating l 175 C Operating Temperature D l Fast Switching VDSS = 100V l Fully Avalanche Rated l Lead-Free RDS(on) = 44m G Description Advanced HEXFET Power MOSFETs from International ID = 32A S Rectifier utilize advanced processing techniques to
irfr3418pbf irfu3418pbf.pdf
PD - 95516A IRFR3418PbF IRFU3418PbF HEXFET Power MOSFET Applications VDSS RDS(on) Max ID l High frequency DC-DC converters l Lead-Free 14m 30A 80V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Current
irfr3410pbf irfu3410pbf.pdf
PD - 95514A IRFR3410PbF IRFU3410PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 100V 39m 31A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Cu
Otros transistores... IRFU224PBF , IRFU2307ZPBF , IRFU2405PBF , IRFU2607ZPBF , IRFU2905ZPBF , IRFU310PBF , IRFU320PBF , IRFU3410PBF , 20N50 , IRFU3418PBF , IRFU3505PBF , IRFU3518PBF , IRFU3607PBF , IRFU3704 , IRFU3704PBF , IRFU3704ZPBF , IRFU3706 .
History: AOSP32320C | AGM20P22AS | AGM30P25D | CTLDM8002A-M621H
History: AOSP32320C | AGM20P22AS | AGM30P25D | CTLDM8002A-M621H
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