IRFU3709ZPBF Todos los transistores

 

IRFU3709ZPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFU3709ZPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 79 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 86 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 460 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
   Paquete / Cubierta: TO-251
 

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IRFU3709ZPBF Datasheet (PDF)

 ..1. Size:265K  international rectifier
 irfr3709zpbf irfu3709zpbf.pdf pdf_icon

IRFU3709ZPBF

PD - 95072AIRFR3709ZPbFIRFU3709ZPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 6.5m 17nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Chara

 5.1. Size:300K  international rectifier
 irfr3709zcpbf irfu3709zcpbf.pdf pdf_icon

IRFU3709ZPBF

PD - 96046IRFR3709ZCPbFIRFU3709ZCPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 6.5m 17nC Converters with Synchronous Rectification for Telecom and Industrial Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Char

 5.2. Size:219K  international rectifier
 irfu3709z.pdf pdf_icon

IRFU3709ZPBF

PD - 94712IRFR3709ZIRFU3709ZApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 6.5m: 17nC Converters with Synchronous Rectification for Telecom and Industrial UseBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedancel Fully Characterized Avalanche

 5.3. Size:262K  inchange semiconductor
 irfu3709zc.pdf pdf_icon

IRFU3709ZPBF

isc N-Channel MOSFET Transistor IRFU3709ZCFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

MOSTRAR MÁS

Otros transistores... IRFU3704 , IRFU3704PBF , IRFU3704ZPBF , IRFU3706 , IRFU3706PBF , IRFU3707 , IRFU3707ZPBF , IRFU3708PBF , MMIS60R580P , IRFU3711 , IRFU3711PBF , IRFU3711ZPBF , IRFU3806PBF , IRFU3910PBF , IRFU3911PBF , IRFU4104PBF , IRFU4105PBF .

History: NCE65N330R | PMN230ENEA | SI4483EDY

 

 
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