IRFU420PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRFR420, IRFU420, SiHFR420, SiHFU420www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0 Surface Mount (IRFR420, SiHFR420) Straight Lead (IRFU420, SiHFU420)Qg (Max.) (nC) 19 Available in Tape and ReelQgs (nC) 3.3 Fast SwitchingQgd (nC) 13 Ease

PD - 95078AIRFR420PbFIRFU420PbF Lead-Free1/7/05Document Number: 91275 www.vishay.com1IRFR/U420PbFDocument Number: 91275 www.vishay.com2IRFR/U420PbFDocument Number: 91275 www.vishay.com3IRFR/U420PbFDocument Number: 91275 www.vishay.com4IRFR/U420PbFDocument Number: 91275 www.vishay.com5IRFR/U420PbFDocument Number: 91275 www.vishay.com6IRFR/U420

PD - 95075ASMPS MOSFETIRFR420APbFIRFU420APbFApplicationsHEXFET Power MOSFETl Switch Mode Power Supply (SMPS)l Uninterruptible Power SupplyVDSS RDS(on) max IDl High speed power switching500V 3.0 3.3Al Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitanc

November 2001IRFR420B / IRFU420B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.3A, 500V, RDS(on) = 2.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to

IRFR420, IRFU420, SiHFR420, SiHFU420Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 3.0 Dynamic dV/dt Rating Repetitive Avalanche RatedQg (Max.) (nC) 19 Surface Mount (IRFR420, SiHFR420)Qgs (nC) 3.3 Straight Lead (IRFU420, SiHFU420)Qgd (nC) 13 Available in Tap

IRFR420A, IRFU420A, SiHFR420A, SiHFU420AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 17 Improved Gate, Avalanche and DynamicQgs (nC) 4.3dV/dt RuggednessQgd (nC) 8.5 Fully Characterized Capac

IRFR420A, IRFU420A, SiHFR420A, SiHFU420AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 17 Improved Gate, Avalanche and DynamicQgs (nC) 4.3dV/dt RuggednessQgd (nC) 8.5 Fully Characterized Capac

IRFR420A, IRFU420A, SiHFR420A, SiHFU420Awww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementRDS(on) ()VGS = 10 V 3.0 Improved Gate, Avalanche and DynamicdV/dt RuggednessQg (Max.) (nC) 17 Fully Characterized Capacitance andQgs (nC) 4.3Avalanche Voltage and CurrentQgd (nC) 8.5

isc N-Channel MOSFET Transistor IRFU420FEATURESDrain Current I = 2.4A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos