IRFU4620PBF Todos los transistores

 ..1. Size:384K  international rectifier
 irfr4620pbf irfu4620pbf.pdf

PD -96207A IRFR4620PbF IRFU4620PbF HEXFET Power MOSFET Applications D VDSS 200V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 64m l High Speed Power Switching G max. 78m l Hard Switched and High Frequency Circuits ID 24A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Capacit

 6.1. Size:261K  inchange semiconductor
 irfu4620.pdf

isc N-Channel MOSFET Transistor IRFU4620 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 8.1. Size:289K  international rectifier
 auirfr4615 auirfu4615.pdf

PD -96398A AUTOMOTIVE GRADE AUIRFR4615 AUIRFU4615 Features HEXFET Power MOSFET l Advanced Process Technology D l Low On-Resistance VDSS 150V l 175 C Operating Temperature l Fast Switching RDS(on) typ. 34m l Repetitive Avalanche Allowed up to Tjmax G max. 42m l Lead-Free, RoHS Compliant l Automotive Qualified * ID 33A S Description D D Specifically designed for Automo

 8.2. Size:299K  international rectifier
 irfr4615pbf irfu4615pbf.pdf

IRFR4615PbF IRFU4615PbF HEXFET Power MOSFET D VDSS 150V Applications l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 34m l Uninterruptible Power Supply G max. 42m l High Speed Power Switching l Hard Switched and High Frequency Circuits ID 33A S D D Benefits l Improved Gate, Avalanche and Dynamic dV/dt S S D Ruggedness G G l Fully Characterized Capac

 8.3. Size:1979K  cn vbsemi
 irfu4615p.pdf

IRFU4615P www.VBsemi.tw N-Channel 200V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.056 at VGS = 10 V 25 PWM Optimized 200 0.070 at VGS = 6 V 23 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-251 APPLICATIONS Primary Side Switch D Drain Connected to G Drain-Tab

 8.4. Size:260K  inchange semiconductor
 irfu4615.pdf

isc N-Channel MOSFET Transistor IRFU4615 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN