IRFU4620PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFU4620PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 144 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 22.4 nS
   Cossⓘ - Capacitancia de salida: 125 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.078 Ohm
   Paquete / Cubierta: TO-251

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IRFU4620PBF Datasheet (PDF)

..1. Size:384K international rectifier
irfr4620pbf irfu4620pbf.pdf

PD -96207AIRFR4620PbFIRFU4620PbFHEXFET Power MOSFETApplications DVDSS200Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 64ml High Speed Power SwitchingG max. 78ml Hard Switched and High Frequency CircuitsID 24ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessl Fully Characterized Capacit

..2. Size:384K infineon
irfr4620pbf irfu4620pbf.pdf

6.1. Size:261K inchange semiconductor
irfu4620.pdf

isc N-Channel MOSFET Transistor IRFU4620FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

8.1. Size:299K international rectifier
irfr4615pbf irfu4615pbf.pdf

IRFR4615PbFIRFU4615PbFHEXFET Power MOSFETDVDSS150VApplicationsl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.34ml Uninterruptible Power SupplyG max. 42ml High Speed Power Switchingl Hard Switched and High Frequency CircuitsID 33ASDDBenefitsl Improved Gate, Avalanche and Dynamic dV/dt SSDRuggednessGGl Fully Characterized Capac

8.2. Size:289K infineon
auirfr4615 auirfu4615.pdf

PD -96398AAUTOMOTIVE GRADEAUIRFR4615AUIRFU4615FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Low On-ResistanceVDSS150Vl 175C Operating Temperaturel Fast Switching RDS(on) typ.34ml Repetitive Avalanche Allowed up to TjmaxG max. 42ml Lead-Free, RoHS Compliantl Automotive Qualified *ID 33ASDescriptionDDSpecifically designed for Automo

8.3. Size:299K infineon
irfr4615pbf irfu4615pbf.pdf

8.4. Size:1979K cn vbsemi
irfu4615p.pdf

IRFU4615Pwww.VBsemi.twN-Channel 200V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.056 at VGS = 10 V 25 PWM Optimized2000.070 at VGS = 6 V 23 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTO-251APPLICATIONS Primary Side SwitchDDrain Connected to GDrain-Tab

8.5. Size:260K inchange semiconductor
irfu4615.pdf

isc N-Channel MOSFET Transistor IRFU4615FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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