IRFU48ZPBF Todos los transistores

 ..1. Size:348K  international rectifier
 irfr48zpbf irfu48zpbf.pdf

PD - 95950A IRFR48ZPbF IRFU48ZPbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 11m G Description ID = 42A S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resista

 7.1. Size:261K  inchange semiconductor
 irfu48z.pdf

isc N-Channel MOSFET Transistor IRFU48Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

 9.1. Size:33K  1
 irfu015 irfu411 irfu9015.pdf

 9.2. Size:62K  1
 irfr410 irfu410.pdf

IRFR410, IRFU410 Data Sheet July 1999 File Number 3372.2 1.5A, 500V, 7.000 Ohm, N-Channel Power Features MOSFETs 1.5A, 500V These are N-Channel enhancement mode silicon gate rDS(ON) = 7.000 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the b

 9.3. Size:330K  international rectifier
 irfr4105zpbf irfu4105zpbf.pdf

PD - 95374B IRFR4105ZPbF IRFU4105ZPbF Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 24.5m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 30A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re

 9.4. Size:301K  international rectifier
 irfr4510pbf irfu4510pbf.pdf

PD - 97784 IRFR4510PbF IRFU4510PbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 11.1m l Uninterruptible Power Supply max. 13.9m l High Speed Power Switching G ID (Silicon Limited) 63A l Hard Switched and High Frequency Circuits S ID (Package Limited) 56A Benefits l Improved Gate, Avalanche and Dynamic dV/d

 9.5. Size:281K  international rectifier
 auirfr4292 auirfu4292.pdf

AUIRFR4292 AUTOMOTIVE GRADE AUIRFU4292 Features HEXFET Power MOSFET Advanced Process Technology D V(BR)DSS 250V Low On-Resistance RDS(on) typ. 275m 175 C Operating Temperature G Fast Switching max. 345m Repetitive Avalanche Allowed up to Tjmax S ID 9.3A Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed for Automotive applicatio

 9.6. Size:879K  international rectifier
 irfr420 irfu420.pdf

PD - 95078A IRFR420PbF IRFU420PbF Lead-Free 1/7/05 Document Number 91275 www.vishay.com 1 IRFR/U420PbF Document Number 91275 www.vishay.com 2 IRFR/U420PbF Document Number 91275 www.vishay.com 3 IRFR/U420PbF Document Number 91275 www.vishay.com 4 IRFR/U420PbF Document Number 91275 www.vishay.com 5 IRFR/U420PbF Document Number 91275 www.vishay.com 6 IRFR/U420

 9.7. Size:289K  international rectifier
 auirfr4615 auirfu4615.pdf

PD -96398A AUTOMOTIVE GRADE AUIRFR4615 AUIRFU4615 Features HEXFET Power MOSFET l Advanced Process Technology D l Low On-Resistance VDSS 150V l 175 C Operating Temperature l Fast Switching RDS(on) typ. 34m l Repetitive Avalanche Allowed up to Tjmax G max. 42m l Lead-Free, RoHS Compliant l Automotive Qualified * ID 33A S Description D D Specifically designed for Automo

 9.8. Size:384K  international rectifier
 irfr4620pbf irfu4620pbf.pdf

PD -96207A IRFR4620PbF IRFU4620PbF HEXFET Power MOSFET Applications D VDSS 200V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 64m l High Speed Power Switching G max. 78m l Hard Switched and High Frequency Circuits ID 24A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Capacit

 9.9. Size:248K  international rectifier
 irfr420apbf irfu420apbf.pdf

PD - 95075A SMPS MOSFET IRFR420APbF IRFU420APbF Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply VDSS RDS(on) max ID l High speed power switching 500V 3.0 3.3A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitanc

 9.10. Size:251K  international rectifier
 irfr430apbf irfu430apbf.pdf

PD -95076A SMPS MOSFET IRFR430APbF IRFU430APbF Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply VDSS RDS(on) max ID l High speed power switching 500V 1.7 5.0A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance

 9.11. Size:185K  international rectifier
 irfu4104.pdf

PD - 94728 IRFR4104 AUTOMOTIVE MOSFET IRFU4104 HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 40V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 5.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID = 42A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes

 9.12. Size:324K  international rectifier
 irfr4104pbf irfu4104pbf.pdf

PD - 95425B IRFR4104PbF IRFU4104PbF HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 40V l Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) = 5.5m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free ID = 42A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on

 9.13. Size:299K  international rectifier
 irfr4615pbf irfu4615pbf.pdf

IRFR4615PbF IRFU4615PbF HEXFET Power MOSFET D VDSS 150V Applications l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 34m l Uninterruptible Power Supply G max. 42m l High Speed Power Switching l Hard Switched and High Frequency Circuits ID 33A S D D Benefits l Improved Gate, Avalanche and Dynamic dV/dt S S D Ruggedness G G l Fully Characterized Capac

 9.14. Size:239K  international rectifier
 irfr4105pbf irfu4105pbf.pdf

PD - 95550A IRFR4105PbF IRFU4105PbF l Ultra Low On-Resistance HEXFET Power MOSFET l Surface Mount (IRFR4105) l Straight Lead (IRFU4105) D VDSS = 55V l Fast Switching l Fully Avalanche Rated l Lead-Free RDS(on) = 0.045 G Description Fifth Generation HEXFETs from International Rectifier ID = 27A S utilize advanced processing techniques to achieve the lowest possible on-r

 9.15. Size:647K  fairchild semi
 irfr420b irfu420b.pdf

November 2001 IRFR420B / IRFU420B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.3A, 500V, RDS(on) = 2.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 14 nC) planar, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to

 9.16. Size:743K  samsung
 irfu410a.pdf

Advanced Power MOSFET IRFU410A BVDSS = 520 V Improved Inductive Ruggedness RDS(on) = 10.0 Rugged Polysilicon Gate Cell Structure Fast Switching Times ID = 1.2 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Improved High Temperature Reliability 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-

 9.17. Size:33K  samsung
 irfu0xx irfu1xx irfu2xx irfu3xx irfu4xx irfu9xxx .pdf

 9.18. Size:252K  vishay
 irfr430a irfr430apbf irfu430apbf sihfr430a sihfu430a.pdf

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement RDS(on) ( )VGS = 10 V 1.7 Improved Gate, Avalanche and Dynamic Qg (Max.) (nC) 24 dV/dt Ruggedness Qgs (nC) 6.5 Fully Characterized Capacitance and Qgd (nC) 13 Avalanche Voltage and Current

 9.19. Size:1841K  vishay
 irfr420 irfu420 sihfr420 sihfu420.pdf

IRFR420, IRFU420, SiHFR420, SiHFU420 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ( )VGS = 10 V 3.0 Dynamic dV/dt Rating Repetitive Avalanche Rated Qg (Max.) (nC) 19 Surface Mount (IRFR420, SiHFR420) Qgs (nC) 3.3 Straight Lead (IRFU420, SiHFU420) Qgd (nC) 13 Available in Tap

 9.20. Size:154K  vishay
 irfr430a irfu430a sihfr430a sihfu430a.pdf

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 1.7 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 24 COMPLIANT Ruggedness Qgs (nC) 6.5 Qgd (nC) 13 Fully Characterized Capacitance and Avalanche Voltage

 9.21. Size:265K  vishay
 irfr420apbf irfu420apbf sihfr420a sihfu420a.pdf

IRFR420A, IRFU420A, SiHFR420A, SiHFU420A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ( )VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 17 Improved Gate, Avalanche and Dynamic Qgs (nC) 4.3 dV/dt Ruggedness Qgd (nC) 8.5 Fully Characterized Capac

 9.22. Size:241K  vishay
 irfr420a irfu420a sihfr420a sihfu420a.pdf

IRFR420A, IRFU420A, SiHFR420A, SiHFU420A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ( )VGS = 10 V 3.0 Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 17 Improved Gate, Avalanche and Dynamic Qgs (nC) 4.3 dV/dt Ruggedness Qgd (nC) 8.5 Fully Characterized Capac

 9.23. Size:1086K  vishay
 irfr420pbf irfr420trpbf irfu420pbf sihfr420 sihfu420.pdf

IRFR420, IRFU420, SiHFR420, SiHFU420 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 Surface Mount (IRFR420, SiHFR420) Straight Lead (IRFU420, SiHFU420) Qg (Max.) (nC) 19 Available in Tape and Reel Qgs (nC) 3.3 Fast Switching Qgd (nC) 13 Ease

 9.24. Size:252K  infineon
 irfr430a irfu430a sihfr430a sihfu430a.pdf

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement RDS(on) ( )VGS = 10 V 1.7 Improved Gate, Avalanche and Dynamic Qg (Max.) (nC) 24 dV/dt Ruggedness Qgs (nC) 6.5 Fully Characterized Capacitance and Qgd (nC) 13 Avalanche Voltage and Current

 9.25. Size:719K  infineon
 auirfr4292 auirfu4292.pdf

AUIRFR4292 AUTOMOTIVE GRADE AUIRFU4292 Features VDSS 250V Advanced Process Technology RDS(on) typ. 275m Low On-Resistance max. 175 C Operating Temperature 345m Fast Switching ID 9.3A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualified * D S S Description D G G Specifical

 9.26. Size:251K  infineon
 irfr420a irfu420a sihfr420a sihfu420a.pdf

IRFR420A, IRFU420A, SiHFR420A, SiHFU420A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement RDS(on) ( )VGS = 10 V 3.0 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Qg (Max.) (nC) 17 Fully Characterized Capacitance and Qgs (nC) 4.3 Avalanche Voltage and Current Qgd (nC) 8.5

 9.27. Size:715K  infineon
 auirfr4104 auirfu4104.pdf

AUIRFR4104 AUTOMOTIVE GRADE AUIRFU4104 Features HEXFET Power MOSFET Advanced Process Technology Low On-Resistance VDSS 40V 175 C Operating Temperature RDS(on) max. 5.5m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 119A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D

 9.28. Size:720K  infineon
 auirfr4105z auirfu4105z.pdf

AUIRFR4105Z AUTOMOTIVE GRADE AUIRFU4105Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175 C Operating Temperature Fast Switching RDS(on) max. 24.5m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 30A Automotive Qualified * D D Description Specifically designed

 9.29. Size:62K  intersil
 irfr410 irfu410.pdf

IRFR410, IRFU410 Data Sheet July 1999 File Number 3372.2 1.5A, 500V, 7.000 Ohm, N-Channel Power Features MOSFETs 1.5A, 500V These are N-Channel enhancement mode silicon gate rDS(ON) = 7.000 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the b

 9.30. Size:879K  cn vbsemi
 irfu430ap.pdf

IRFU430AP www.VBsemi.tw N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Requirement RoHS RDS(on) ( )VGS = 10 V 2.0 COMPLIANT Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Complia

 9.31. Size:1979K  cn vbsemi
 irfu4615p.pdf

IRFU4615P www.VBsemi.tw N-Channel 200V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.056 at VGS = 10 V 25 PWM Optimized 200 0.070 at VGS = 6 V 23 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-251 APPLICATIONS Primary Side Switch D Drain Connected to G Drain-Tab

 9.32. Size:261K  inchange semiconductor
 irfu4510.pdf

isc N-Channel MOSFET Transistor IRFU4510 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 9.33. Size:246K  inchange semiconductor
 irfu4105.pdf

isc N-Channel MOSFET Transistor IRFU4105 FEATURES Static drain-source on-resistance RDS(on) 45m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-Source Volt

 9.34. Size:261K  inchange semiconductor
 irfu4105z.pdf

isc N-Channel MOSFET Transistor IRFU4105Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 9.35. Size:261K  inchange semiconductor
 irfu4620.pdf

isc N-Channel MOSFET Transistor IRFU4620 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 9.36. Size:272K  inchange semiconductor
 irfu430a.pdf

isc N-Channel MOSFET Transistor IRFU430A FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 1.7 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.37. Size:260K  inchange semiconductor
 irfu4615.pdf

isc N-Channel MOSFET Transistor IRFU4615 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 9.38. Size:272K  inchange semiconductor
 irfu420.pdf

isc N-Channel MOSFET Transistor IRFU420 FEATURES Drain Current I = 2.4A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 3.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 9.39. Size:261K  inchange semiconductor
 irfu4104.pdf

isc N-Channel MOSFET Transistor IRFU4104 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN