STC4545 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STC4545 datasheet

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stc4545.pdf pdf_icon

STC4545 30V N & P Pair Enhancement Mode MOSFET DESCRIPTION FEATURE The STC4545 is the N & P-Channel enhancement N-Channel mode power field effect transistor is produced using 30V / 6.8A, RDS(ON) =18m (typ.)@VGS =10V high cell density. advanced trench technology to 30V / 6.0A, RDS(ON) =26m (typ.)@VGS =4.5V provide excellent RDS(ON). This device iswidely prefe

9.1. Size:629K stansontech
stc4567.pdf pdf_icon

STC4567 N&P Pair Enhancement Mode MOSFET 10A / -10A DESCRIPTION The STC4567 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application su

9.2. Size:934K stansontech
stc4516.pdf pdf_icon

STC4516 Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl DESCRIPTION STC4516 is the complementary enhancement mode power field effect transistor using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION FEATURE SOP-8 P Channel Top View -30V/-7.2A

9.3. Size:448K stansontech
stc4539.pdf pdf_icon

STC4539 N&P Pair Enhancement Mode MOSFET 6.8A / -6.2A DESCRIPTION The STC4539 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application

Otros transistores... IRFU430APBF , IRFU4510PBF , IRFU4615PBF , IRFU4620PBF , IRFU48ZPBF , IRFU5305PBF , STC4516 , STC4539 , IRF840 , STC4567 , STC4606 , STC4614 , STC6332 , STC6602 , STC6614 , STD100N03LT4 , STD100N10F7 .