STD105N10F7AG MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STD105N10F7AG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STD105N10F7AG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 120 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 823 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: DPAK

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STD105N10F7AG datasheet

..1. Size:940K st
std105n10f7ag.pdf pdf_icon

STD105N10F7AG Automotive-grade N-channel 100 V, 0.0068 typ., 80 A, STripFET F7 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max ID PTOT TAB STD105N10F7AG 100 V 0.008 80 A 120 W Designed for automotive applications and 3 AEC-Q101 qualified 1 Among the lowest RDS(on) on the market DPAK Excellent figure of merit (F

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Otros transistores... STC4614 , STC6332 , STC6602 , STC6614 , STD100N03LT4 , STD100N10F7 , STD100NH02LT4 , STD100NH03LT4 , IRF640N , STD10N60M2 , STD10NF10-1 , STD10NF10T4 , STD10NF30 , STD10P6F6 , STD10PF06-1 , STD10PF06T4 , STD110N02R .