STD110N02RT4G Todos los transistores

 ..1. Size:131K  onsemi
 ntd110n02rg std110n02rt4g.pdf

NTD110N02R, STD110N02R Power MOSFET 24 V, 110 A, N-Channel DPAK Features Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss http //onsemi.com Low Ciss to Minimize Driver Loss V(BR)DSS RDS(on) TYP ID MAX Low Gate Charge 24 V 4.1 mW @ 10 V 110 A Optimized for High Side Switching Requirements in High-Efficiency DC-DC Converter

 4.1. Size:93K  onsemi
 std110n02r.pdf

NTD110N02R, STD110N02R Power MOSFET 24 V, 110 A, N-Channel DPAK Features Planar HD3e Process for Fast Switching Performance http //onsemi.com Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss V(BR)DSS RDS(on) TYP ID MAX Low Gate Charge 24 V 4.1 mW @ 10 V 110 A Optimized for High Side Switching Requirements in High-Efficiency DC-DC Converter

 7.1. Size:466K  st
 std110nh02l.pdf

STD110NH02L N-channel 24V - 0.0044 - 80A - DPAK STripFET III Power MOSFET General features VDSSS RDS(on) ID Type STD110NH02L 24V

 7.2. Size:479K  st
 std110nh02lt4.pdf

STD110NH02L N-channel 24V - 0.0044 - 80A - DPAK STripFET III Power MOSFET General features VDSSS RDS(on) ID Type STD110NH02L 24V

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 std110n8f6.pdf

STD110N8F6 N-channel 80 V, 0.0056 typ.,80 A, STripFET F6 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on)max ID PTOT TAB STD110N8F6 80 V 0.0065 80 A 167 W 3 2 Very low on-resistance 1 Very low gate charge High avalanche ruggedness DPAK Low gate drive power loss Applications Figure 1. Internal schematic diagr