STD30PF03LT4 Todos los transistores

STD30PF03LT4 STD30PF03L-1 P-channel 30 V - 0.025 - 24 A - DPAK / IPAK STripFET II Power MOSFET Features Type VDSS RDS(on) max ID STD30PF03LT4 30 V

STD30PF03LT4 STD30PF03L-1 P-channel 30 V - 0.025 - 24 A - DPAK / IPAK STripFET II Power MOSFET Features Type VDSS RDS(on) max ID STD30PF03LT4 30 V

STD30PF03 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.025 at VGS = - 4.5 V - 35 APPLICATIONS Load Switch Battery Switch S TO-252 G D G D S P-Channel MOSFET A

STD30NE06 N - CHANNEL 60V - 0.025 - 30A - DPAK STripFET " POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STD30NE06 60 V

STD30NF06L N-CHANNEL 60V - 0.022 - 35A DPAK/IPAK STripFET POWER MOSFET TYPE VDSS RDS(on) ID STD30NF06L 60 V

STD30NE06L N - CHANNEL 60V - 0.025 - 30A TO-252 STripFET POWER MOSFET TYPE VDSS RDS(on) ID STD30NE06L 60 V

STD30NF06 N-CHANNEL 60V - 0.020 - 28A IPAK/DPAK STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STD30NF06 60 V

STD30NF06 N-CHANNEL 60V - 0.020 - 28A IPAK/DPAK STripFET II POWER MOSFET TYPE VDSS RDS(on) ID STD30NF06 60 V

STD30NE06L N - CHANNEL 60V - 0.025 - 30A - DPAK STripFET " POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STD30NE06L 60 V

STD30NE06L N - CHANNEL 60V - 0.025 - 30A TO-252 STripFET POWER MOSFET TYPE VDSS RDS(on) ID STD30NE06L 60 V

STD30NF06L N-CHANNEL 60V - 0.022 - 35A DPAK/IPAK STripFET POWER MOSFET TYPE VDSS RDS(on) ID STD30NF06L 60 V

STD30N10F7, STF30N10F7 N-channel 100 V, 0.02 typ., 32 A STripFET VII DeepGATE Power MOSFETs in DPAK and TO-220FP packages Datasheet - production data Features Order codes VDS RDS(on) max ID PTOT STD30N10F7 32 A 50 W 100 V 0.024 TAB STF30N10F7 24 A 25 W 3 1 Ultra low on-resistance 3 DPAK 2 100% avalanche tested 1 TO-220FP Applications Switching appl

STD30N10F7 N-channel 100 V, 0.02 typ., 32 A, STripFET F7 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STD30N10F7 100 V 0.024 32 A 50 W Among the lowest R on the market DS(on) Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss High avalanche ruggedness Figure 1 I

STD30NF04LT N-channel 40 V, 0.03 typ., 30 A, STripFET II Power MOSFET in a DPAK package Datasheet - production data Features Order code VDSS RDS(on) max ID STD30NF04LT 40 V

STD30NF03L STD30NF03L-1 N-channel 30V - 0.020 - 30A - DPAK/IPAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD30NF03L-1 30V

STD30NF03L STD30NF03L-1 N-channel 30V - 0.020 - 30A - DPAK/IPAK STripFET II Power MOSFET General features Type VDSS RDS(on) ID STD30NF03L-1 30V

Green Product STU/D30N15 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 22A 150V 62 @ VGS=10V TO-252 and TO-251 Package. G S STU SERIES STD SERIES TO-252AA (D-PAK) TO-251 (I-PAK) ABSOLUTE MAXIMUM RATING

STU30N01 Green Product STD30N01 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 30A 30 @ VGS=10V 100V TO-252 and TO-251 Package. G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK A

S TU/D303S S amHop Microelectronics C orp. Nov, 2007 16, P-C hannel E nhancement Mode Field E ffect Transistor FEATURES PRODUCT SUMMARY S uper high dense cell design for low R DS (ON). RDS(ON) (mW) Max V DS S ID R ugged and reliable. 28 @ V GS =-10V S urface Mount Package. -30V -24A 40 @ V GS = -4.5V ESD Procteced D D G S G STU SERIES STD SERIES TO-252AA(D-P AK) TO-251(l-P

S TU/D302S S amHop Microelectronics C orp. Apr 03,2006 N-Channel Logic Level E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y FEATURES S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 9 @ VGS =10V 30V 50 A TO-252 and TO-251 Package. 12 @ VGS =4.5V D D G S G STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(l-PAK)

Green Product STU/D30L01A a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 100V 30A 30 @ VGS=10V TO-252 and TO-251 Package. G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA

Green Product STU/D307S a S mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 9.5 @ VGS=-10V Suface Mount Package. -30V -53A 14 @ VGS=-4.5V ESD Protected. G G S S STU SERIES STD SERIES ( ) TO - 252AA D- P

Green Product S TU/D3030NLS S amHop Microelectronics C orp. Aug 08,2005 N-Channel Logic Level E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y FEATUR ES S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 18 @ VGS = 10V 30V 30A TO-252 and TO-251 Package. 25 @ VGS =4.5V D D D G G S S G STU SERIES STD SERIES T

Green Product S TU/D3055L S amHop Microelectronics C orp. Nov,01 2006 ver1.3 N-Channel Logic Level E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y FEATUR ES S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 60 @ VGS = 10V 25V 12A TO-252 and TO-251 Package. 85 @ VGS =4.5V D D D G G S S G STU SERIES STD SERI

Green Product STU/D30L01 a S mHop Microelectronics C orp. Ver 2.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 100V 30A 30 @ VGS=10V TO-252 and TO-251 Package. G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (TA=

STD30NF04LT www.VBsemi.tw N-Channel 4 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.013 at VGS = 10 V 55 40 42 nC 0.018 at VGS = 4.5 V 45 APPLICATIONS D OR-ing TO-252 Server DC/DC G D G S S Top View N-Channel MOSFET