STD36P4LLF6 Todos los transistores

STD36P4LLF6 P-channel 40 V, 0.016 typ., 36 A, STripFET VI DeepGATE Power MOSFET in a DPAK package Datasheet - target specification RDS(on)* Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate input resistance Applications Switching applications DPAK LCC converters, resonant converters Description

STD36NH02L N-channel 24V - 0.011 - 30A - DPAK STripFET III Power MOSFET General features Type VDSS RDS(on) ID STD36NH02L 24V

STD361 NPN Silicon Transistor PIN Connection Description Extremely low collector-to-emitter saturation voltage ( VCE(SAT)=0.2V Typ. @IC/IB=3A/150 ) Suitable for low voltage large current drivers Switching Application SOT-89 Ordering Information Type NO. Marking Package Code YA STD361 SOT-89 YWW YA DEVICE CODE, YWW(Y Year code, WW Weekly

Gr P Pr P P STU/D36L01A a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 100V 36A 17 @ VGS=10V TO-252 and TO-251 Package. G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK (T