STD3NK80ZT4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STD3NK80ZT4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 70 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 2.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 27 nS
Cossⓘ - Capacitancia de salida: 57 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.5 Ohm
Encapsulados: DPAK
Búsqueda de reemplazo de STD3NK80ZT4 MOSFET
- Selecciónⓘ de transistores por parámetros
STD3NK80ZT4 datasheet
..1. Size:1357K st
std3nk80z-1 std3nk80zt4 stf3nk80z stp3nk80z.pdf 
STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z, STP3NK80Z N-channel 800 V, 3.8 typ., 2.5 A SuperMESH Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages Datasheet - production data Features Order code V R I DS DS(on) max. D STD3NK80Z-1 800 V 4.5 2.5 A STD3NK80ZT4 800 V 4.5 2.5 A STF3NK80Z 800 V 4.5 2.5 A STP3NK80Z 800 V 4.5 2.5 A Extremely high dv/dt capabil
..2. Size:880K st
std3nk80zt4.pdf
STD3NK80Z, STD3NK80Z-1 STF3NK80Z, STP3NK80Z N-channel 800 V, 3.8 , 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH Power MOSFET Features VDSS Type RDS(on) ID (@Tjmax) STP3NK80Z 800 V
5.1. Size:882K st
std3nk80z std3nk80z-1 stf3nk80z stp3nk80z.pdf
STD3NK80Z, STD3NK80Z-1 STF3NK80Z, STP3NK80Z N-channel 800 V, 3.8 , 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH Power MOSFET Features VDSS Type RDS(on) ID (@Tjmax) STP3NK80Z 800 V
8.1. Size:417K st
stf3nk100z std3nk100z stp3nk100z.pdf
STF3NK100Z - STD3NK100Z STP3NK100Z N-channel 1000V - 5.4 - 2.5A - TO-220 - TO-220FP - DPAK Zener-protected SuperMESH Power MOSFET Features RDS(on) VDSS ID PTOT Type Max STF3NK100Z 1000V
8.2. Size:424K st
stf3nk100z stp3nk100z std3nk100z.pdf
STF3NK100Z - STD3NK100Z STP3NK100Z N-channel 1000V - 5.4 - 2.5A - TO-220 - TO-220FP - DPAK Zener-protected SuperMESH Power MOSFET Features RDS(on) VDSS ID PTOT Type Max STF3NK100Z 1000V
8.3. Size:932K st
stb3nk60zt4 std3nk60z-1 std3nk60zt4 stp3nk60z stp3nk60zfp.pdf
STB3NK60ZT4, STD3NK60Z-1, STD3NK60ZT4 STP3NK60Z, STP3NK60ZFP Datasheet N-channel 600 V, 3.2 typ., 2.4 A SuperMESH Power MOSFETs in D PAK, IPAK, DPAK, TO-220 and TO-220FP packages Features TAB TAB 3 VDS RDS(on) max. ID Order codes Package 2 3 1 1 D2PAK IPAK TAB STB3NK60ZT4 D2PAK 2 3 TAB 1 STD3NK60Z-1 IPAK DPAK 600 V 3.6 2.4 A STD3NK60ZT4 DPAK 3 STP3NK60Z TO
8.4. Size:551K st
stb3nk60zt4 std3nk60zt4.pdf
STP3NK60Z - STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 N-CHANNEL 600V - 3.3 - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STP3NK60Z 600 V
8.5. Size:630K st
std3nk90z stp3nk90z stp3nk90zfp.pdf
PCB STD3NK90Z, STP3NK90Z, STP3NK90ZFP N-channel 900 V, 4.1 typ., 3 A Zener-protected SuperMESH Power MOSFET in DPAK, TO-220 and TO-220FP packages Datasheet - production data Features TAB TAB 2 Order codes VDS RDS(on) ID PTOT 3 1 STD3NK90ZT4 3 90 W 2 DPAK 1 STP3NK90Z 900 V 4.8 3 A TO-220 STP3NK90ZFP 25 W Extremely high
8.6. Size:575K st
std3nk100z stf3nk100z.pdf
STD3NK100Z, STF3NK100Z Datasheet N-channel 1000 V, 5.4 typ., 2.5 A SuperMESH Power MOSFETs in DPAK and TO-220FP packages Features VDS RDS(on) max. ID Order code Package STD3NK100Z DPAK 1000 V 6 2.5 A STF3NK100Z TO-220FP Extremely high dv/dt capability 100% avalanche tested Gate charge minimized D(2, TAB) Very low intrinsic capacitance Zener-protected
8.7. Size:348K st
std3nk60zd.pdf
STD3NK60ZD N-channel 600 V, 3.3 , 2.4 A, DPAK SuperFREDMesh Power MOSFET Features RDS(on) Type VDSS ID max STD3NK60ZD 600 V
8.8. Size:472K st
stq3nk50zr-ap std3nk50z std3nk50z-1.pdf
STQ3NK50ZR-AP STD3NK50Z - STD3NK50Z-1 N-CHANNEL 500V - 2.8 - 2.3A TO-92/DPAK/IPAK Zener-Protected SuperMESH MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID Pw STQ3NK50ZR-AP 500 V 3.3 0.5 A 3 W STD3NK50Z 500 V 3.3 2.3 A 45 W STD3NK50Z-1 500 V 3.3 2.3 A 45 W 3 TYPICAL RDS(on) = 2.8 1 EXTREMELY HIGH dv/dt CAPABILITY DPAK TO-92 (Ammopak)
8.9. Size:481K st
std3nk50z std3nk50z-1 stq3nk50zr-ap.pdf
STQ3NK50ZR-AP STD3NK50Z - STD3NK50Z-1 N-CHANNEL 500V - 2.8 - 2.3A TO-92/DPAK/IPAK Zener-Protected SuperMESH MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID Pw STQ3NK50ZR-AP 500 V 3.3 0.5 A 3 W STD3NK50Z 500 V 3.3 2.3 A 45 W STD3NK50Z-1 500 V 3.3 2.3 A 45 W 3 TYPICAL RDS(on) = 2.8 1 EXTREMELY HIGH dv/dt CAPABILITY DPAK TO-92 (Ammopak)
8.10. Size:438K st
std3nk90zt4 stp3nk90zfp.pdf
STP3NK90Z - STP3NK90ZFP STD3NK90Z - STD3NK90Z-1 N-CHANNEL 900V - 4.1 - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STP3NK90Z 900 V
8.11. Size:757K st
stp3nk60z-fp stb3nk60z std3nk60z std3nk60z-1.pdf
STP3NK60Z - STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 N-CHANNEL 600V - 3.3 - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STP3NK60Z 600 V
8.12. Size:613K st
stp3nk90z stp3nk90zfp std3nk90z std3nk90z-1.pdf
STP3NK90Z - STP3NK90ZFP STD3NK90Z - STD3NK90Z-1 N-CHANNEL 900V - 4.1 - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STP3NK90Z 900 V
8.14. Size:472K st
std3nk50z-1 std3nk50zt4 stq3nk50zr-ap.pdf
STQ3NK50ZR-AP STD3NK50Z - STD3NK50Z-1 N-CHANNEL 500V - 2.8 - 2.3A TO-92/DPAK/IPAK Zener-Protected SuperMESH MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID Pw STQ3NK50ZR-AP 500 V 3.3 0.5 A 3 W STD3NK50Z 500 V 3.3 2.3 A 45 W STD3NK50Z-1 500 V 3.3 2.3 A 45 W 3 TYPICAL RDS(on) = 2.8 1 EXTREMELY HIGH dv/dt CAPABILITY DPAK TO-92 (Ammopak)
8.15. Size:558K st
std3nk90zt4 stp3nk90z stp3nk90zfp.pdf
STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP Datasheet N-channel 900 V, 3.6 typ., 3 A SuperMESH Power MOSFETs in DPAK, TO-220 and TO-220FP packages Features TAB 3 2 VDS RDS(on) max. ID Order code Package 1 DPAK STD3NK90ZT4 DPAK TAB STP3NK90Z 900 V 4.8 3 A TO-220 STP3NK90ZFP TO-220FP 3 3 2 2 1 1 TO-220 TO-220FP Extremely high dv/dt capability 100% avalanche tested
8.16. Size:286K inchange semiconductor
std3nk100z.pdf
isc N-Channel MOSFET Transistor STD3NK100Z FEATURES Drain Current I = 2.5A@ T =25 D C Drain Source Voltage V = 1000V(Min) DSS Static Drain-Source On-Resistance R = 10 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.
8.17. Size:207K inchange semiconductor
std3nk60zt4.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor STD3NK60ZT4 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
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