STD5407NT4G Todos los transistores

 

STD5407NT4G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STD5407NT4G
   Código: 5407N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 38 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 20 nC
   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 173 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
   Paquete / Cubierta: DPAK
     - Selección de transistores por parámetros

 

STD5407NT4G Datasheet (PDF)

 ..1. Size:135K  onsemi
 ntd5407ng std5407nt4g.pdf pdf_icon

STD5407NT4G

NTD5407N, STD5407NPower MOSFET40 V, 38 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate Charge AEC Q101 Qualified - STD5407NID MAXV(BR)DSS RDS(ON) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant40 V 21 mW @ 10 V 38 AApplications Electronic Brake Systems Electronic Power SteeringN-Ch

 6.1. Size:96K  onsemi
 std5407n.pdf pdf_icon

STD5407NT4G

NTD5407N, STD5407NPower MOSFET40 V, 38 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate ChargeID MAX STD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(ON) TYP (Note 1)Unique Site and Control Change Requirements; AEC-Q10140 V 21 mW @ 10 V 38 AQualified and PPAP Capable* These Devices ar

 8.1. Size:97K  onsemi
 std5406n.pdf pdf_icon

STD5407NT4G

NTD5406N, STD5406NPower MOSFET40 V, 70 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate ChargeID MAX STD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(ON) TYP (Note 1)Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable* 40 V 8.7 m @ 10 V 70 A These Devices a

 8.2. Size:136K  onsemi
 ntd5406ng std5406nt4g.pdf pdf_icon

STD5407NT4G

NTD5406N, STD5406NPower MOSFET40 V, 70 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate Charge AEC Q101 Qualified - STD5406NID MAXV(BR)DSS RDS(ON) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant40 V 8.7 m @ 10 V 70 AApplications Electronic Brake Systems Electronic Power SteeringN-

MOSTRAR MÁS

Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: 2SK3988-01 | MDV1523URH | STL3N10F7

 

 
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