STD7NM64N Todos los transistores

 

STD7NM64N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STD7NM64N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 640 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 24.6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.05 Ohm
   Paquete / Cubierta: DPAK

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STD7NM64N Datasheet (PDF)

 ..1. Size:986K  st
std7nm64n.pdf

STD7NM64N STD7NM64N

STD7NM64NN-channel 640 V, 5 A, 0.88 typ., MDmesh II Power MOSFET in a DPAK packageDatasheet - production dataFeatures Order code VDS RDS(on) max. IDSTD7NM64N 640 V 1.05 5 A TAB 100% avalanche tested3 Low input capacitance and gate charge1 Low gate input resistanceDPAKApplications Switching applicationsDescriptionFigure 1. Internal schematic

 7.1. Size:596K  st
std7nm60n stf7nm60n stu7nm60n.pdf

STD7NM64N STD7NM64N

STD7NM60N, STF7NM60N, STU7NM60NDatasheetN-channel 600 V, 0.8 typ., 5 A MDmesh II Power MOSFETs in DPAK, TO-220FP and IPAK packages FeaturesVDS RDS(on) max. IDOrder code PackageSTD7NM60N DPAKSTF7NM60N 600 V 0.9 5 A TO-220FPSTU7NM60N IPAKD(2, TAB) 100% avalanche tested Low input capacitance and gate charge Low gate input resistanceG(1)Applications

 7.2. Size:882K  st
std7nm60n stf7nm60n stp7nm60n stu7nm60n.pdf

STD7NM64N STD7NM64N

STD7NM60N, STF7NM60NSTP7NM60N, STU7NM60NN-channel 600 V, 5 A, 0.76 , DPAK, TO-220FP, TO-220, IPAKsecond generation MDmesh Power MOSFETFeaturesVDSS @ RDS(on) Order codes ID3TJmax max.2 3211STD7NM60NTO-220IPAKSTF7NM60N650 V

 8.1. Size:969K  st
std7nm80 std7nm80-1 stf7nm80 stp7nm80.pdf

STD7NM64N STD7NM64N

STD7NM80, STD7NM80-1STF7NM80, STP7NM80N-channel 800 V, 0.95 , 6.5 A TO-220, TO-220FP, IPAK, DPAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) IDSTD7NM80 800 V

 8.2. Size:424K  st
std7nm50n std7nm50n-1 stf7nm50n stp7nm50n.pdf

STD7NM64N STD7NM64N

STD7NM50N - STD7NM50N-1STF7NM50N - STP7NM50NN-channel 500V - 0.70 - 5A - TO-220 - TO-220FP - IPAK - DPAKSecond generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)213STD7NM50N 550V

 8.3. Size:426K  st
std7nm50n-1 std7nm50n stf7nm50n stp7nm50n.pdf

STD7NM64N STD7NM64N

STD7NM50N - STD7NM50N-1STF7NM50N - STP7NM50NN-channel 500V - 0.70 - 5A - TO-220 - TO-220FP - IPAK - DPAKSecond generation MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID3(@Tjmax)213STD7NM50N 550V

 8.4. Size:971K  st
std7nm80-1 std7nm80 stf7nm80 stp7nm80.pdf

STD7NM64N STD7NM64N

STD7NM80, STD7NM80-1STF7NM80, STP7NM80N-channel 800 V, 0.95 , 6.5 A TO-220, TO-220FP, IPAK, DPAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) IDSTD7NM80 800 V

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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