STD80N10F7 Todos los transistores

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 std80n10f7 stf80n10f7 sth80n10f7-2 stp80n10f7.pdf

STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 N-channel 100 V, 0.008 typ., 80 A STripFET VII DeepGATE Power MOSFETs in DPAK, TO-220FP, H2PAK-2 and TO-220 Datasheet - production data Features TAB VDS @ RDS(on) 3 Order codes ID PTOT TJmax max 1 DPAK 3 STD80N10F7 0.01 70 A 85 W 2 1 TO-220FP STF80N10F7 0.01 40 A 30 W 100 V TAB TAB STH80N10F7-2 0.0095 80 A

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 std80n6f6.pdf

STD80N6F6 Automotive-grade N-channel 60 V, 4.4 m typ., 80 A STripFET VI DeepGATE Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID TAB STD80N6F6 60 V 5 m 80 A(1) 1. Current limited by package 3 Designed for automotive applications and AEC-Q101 qualified 1 Low gate charge DPAK Very low on-resistance Hi

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 std80n4f6.pdf

STD80N4F6 Automotive-grade N-channel 40 V, 5.5 m typ., 80 A STripFET VI DeepGATE Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max ID TAB STD80N4F6 40 V 6 m 80 A 3 Designed for automotive applications and 1 AEC-Q101 qualified DPAK Low gate charge Very low on-resistance High avalanche ruggedness Figure 1. In

 9.1. Size:123K  samhop
 stu802s std802s.pdf

Green Product STU/D802S a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 35 @ VGS=10V 80V 25A TO-252 and TO-251 Package. 50 @ VGS=4.5V D D D G G S S G STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(l-P