IRFU540Z Todos los transistores

 ..1. Size:353K  international rectifier
 irfr540zpbf irfu540zpbf.pdf

PD - 96141B IRFR540ZPbF Features IRFU540ZPbF l Advanced Process Technology l Ultra Low On-Resistance HEXFET Power MOSFET l 175 C Operating Temperature D l Fast Switching VDSS = 100V l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l Halogen-Free RDS(on) = 28.5m G Description ID = 35A This HEXFET Power MOSFET utilizes the latest S processing techniques to achiev

 ..2. Size:371K  international rectifier
 irfu540z.pdf

APPROVED PD - TBD AUTOMOTIVE MOSFET IRFR540Z IRFU540Z Features lAdvanced Process Technology HEXFET Power MOSFET lUltra Low On-Resistance D l175 C Operating Temperature VDSS = 100V lFast Switching lRepetitive Avalanche Allowed up to Tjmax RDS(on) = 28.5m G Description ID = 35A Specifically designed for Automotive applications, S this HEXFET Power MOSFET utilizes the l

 ..3. Size:261K  inchange semiconductor
 irfu540z.pdf

isc N-Channel MOSFET Transistor IRFU540Z FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 0.1. Size:285K  international rectifier
 auirfr540z auirfu540z.pdf

AUTOMOTIVE GRADE AUIRFR540Z AUIRFU540Z HEXFET Power MOSFET VDSS 100V D D RDS(on) typ. 22.5m S max. 28.5m S D G G G ID 35A D-Pak I-Pak S AUIRFR540Z AUIRFU540Z Applications l Automatic Voltage Regulator (AVR) GDS l Solenoid Injection Gate Drain Source l Body Control l Low Power Automotive Applications Standard Pack Base part number Package Type Orderable Part Number

 0.2. Size:725K  infineon
 auirfr540z auirfu540z.pdf

AUIRFR540Z AUTOMOTIVE GRADE AUIRFU540Z HEXFET Power MOSFET Application VDSS 100V Automatic Voltage Regulator (AVR) RDS(on) typ. 22.5m Solenoid Injection Body Control max. 28.5m Low Power Automotive Applications ID 35A D D Description Specifically designed for Automotive applications, this HEXFET S Power MOSFET utilizes the lates

 8.1. Size:267K  international rectifier
 irfr5410pbf irfu5410pbf.pdf

PD -95314A IRFR5410PbF IRFU5410PbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel D VDSS = -100V l Surface Mount (IRFR5410) l Straight Lead (IRFU5410) l Advanced Process Technology RDS(on) = 0.205 G l Fast Switching l Fully Avalanche Rated ID = -13A S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing tech

 8.2. Size:246K  inchange semiconductor
 irfu5410.pdf

isc P-Channel MOSFET Transistor IRFU5410 FEATURES Static drain-source on-resistance RDS(on) 205m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 C operating junction temperature ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage -100