IRFU9210PBF Todos los transistores

 

IRFU9210PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFU9210PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 8.9 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 54 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: TO-251

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IRFU9210PBF Datasheet (PDF)

 ..1. Size:1809K  international rectifier
irfr9210pbf irfu9210pbf.pdf

IRFU9210PBF
IRFU9210PBF

PD - 95027AIRFR9210PbFIRFU9210PbF Lead-Free12/14/04Document Number: 91281 www.vishay.com1IRFR/U9210PbFDocument Number: 91281 www.vishay.com2IRFR/U9210PbFDocument Number: 91281 www.vishay.com3IRFR/U9210PbFDocument Number: 91281 www.vishay.com4IRFR/U9210PbFDocument Number: 91281 www.vishay.com5IRFR/U9210PbFDocument Number: 91281 www.vishay.com6

 ..2. Size:803K  vishay
irfr9210pbf irfu9210pbf sihfr9210 sihfu9210.pdf

IRFU9210PBF
IRFU9210PBF

IRFR9210, IRFU9210, SiHFR9210, SiHFU9210www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200 Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 3.0 Surface Mount (IRFR9210, SiHFR9210)Qg (Max.) (nC) 8.9 Straight Lead (IRFU9210, SiHFU9210)Qgs (nC) 2.1 Available in Tape and ReelQgd (nC) 3.9 P-Channel

 6.1. Size:1578K  vishay
irfr9210 irfu9210 sihfr9210 sihfu9210.pdf

IRFU9210PBF
IRFU9210PBF

IRFR9210, IRFU9210, SiHFR9210, SiHFU9210Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 200Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 3.0RoHS* Surface Mount (IRFR9210/SiHFR9210)Qg (Max.) (nC) 8.9COMPLIANT Straight Lead (IRFU9210/SiHFU9210)Qgs (nC) 2.1Qgd (nC) 3.9 Available in Tape and ReelConf

 7.1. Size:46K  1
irfu212 irfu9212.pdf

IRFU9210PBF

 7.2. Size:279K  international rectifier
irfr9214 irfu9214.pdf

IRFU9210PBF
IRFU9210PBF

PD - 95375AIRFR/U9214PbFHEXFET Power MOSFETl P-Channel DVDSS = -250Vl Surface Mount (IRFR9214)l Straight Lead (IRFU9214)RDS(on) = 3.0l Advanced Process TechnologyGl Fast Switchingl Fully Avalanche Rated ID = -2.7ASl Lead-FreeDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve lowon-resistance pe

 7.3. Size:151K  vishay
irfr9214 irfu9214 sihfr9214 sihfu9214.pdf

IRFU9210PBF
IRFU9210PBF

IRFR9214, IRFU9214, SiHFR9214, SiHFU9214Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY P-ChannelVDS (V) - 250 Surface Mount (IRFR9214/SiHFR9214) AvailableRDS(on) ()VGS = - 10 V 3.0 Straight Lead (IRFU9214/SiHFU9214) RoHS*Qg (Max.) (nC) 14COMPLIANT Advanced Process TechnologyQgs (nC) 3.1 Fast SwitchingQgd (nC) 6.8 Fully Avalanche RatedC

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