IRFY230C Todos los transistores

IRFY230C Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 200V ID = 9A RDS(ON) = 0.4 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX, JAN

IRFY230 MECHANICAL DATA Dimensions in mm (inches) N CHANNEL 4.83 (0.190) POWER MOSFET 5.08 (0.200) 10.41 (0.410) 10.67 (0.420) 0.89 (0.035) 1.14 (0.045) FOR HI REL 3.56 (0.140) APPLICATIONS Dia. 3.81 (0.150) VDSS 200V 1 2 3 ID(cont) 9A RDS(on) 0.40 0.64 (0.025) Dia. 0.89 (0.035) FEATURES 2.54 (0.100) 3.05 (0.120) BSC BSC HERMETICALLY SEALED TO 257AA

PD - 91289C IRFY240C,IRFY240CM POWER MOSFET 200V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY240 0.18 16A Glass IRFY240M 0.18 16A Glass HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very low on-st

PD - 94187 IRFY240,IRFY240M POWER MOSFET 200V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY240 0.18 16A Glass IRFY240M 0.18 16A Glass HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very low on-state

PD-91289E IRFY240C,IRFY240CM POWER MOSFET 200V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY240C 0.18 16A Ceramic IRFY240CM 0.18 16A Ceramic TO-257AA HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very lo

IRFY210 Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 200V ID = 1.8A RDS(ON) = 1.725 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX,

IRFY220 Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 200V ID = 4A RDS(ON) = 0.92 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX, JAN

IRFY210C Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 200V ID = 1.8A RDS(ON) = 1.725 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX,

N-CHANNEL POWER MOSFET IRFY240 / IRFY240M Low RDS(on) MOSFET Transistor In A Hermetic Metal TO-257AB Package Designed For Switching, Power Supply, Motor Control and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VDS Drain Source Voltage 200V VGS Gate Source Voltage 20V ID Tc = 25 C