IRFY310C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFY310C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 11 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
|Id|ⓘ - Corriente continua de drenaje: 1.2 A
CARACTERÍSTICAS ELÉCTRICAS
Qgⓘ - Carga de la puerta: 8.4 nC
trⓘ - Tiempo de subida: 20 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.15 Ohm
Paquete / Cubierta: TO-257AB
Búsqueda de reemplazo de MOSFET IRFY310C
IRFY310C Datasheet (PDF)
irfy310c.pdf
IRFY310CDimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 400V ID = 1.2A RDS(ON) = 4.15 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX,
irfy310.pdf
IRFY310Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 400V ID = 1.2A RDS(ON) = 4.15 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX, J
irfy340cm.pdf
PD - 91290CIRFY340C,IRFY340CMPOWER MOSFET 400V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY340C 0.55 8.7A CeramicIRFY340CM 0.55 8.7A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very l
irfy340c.pdf
PD - 91290CIRFY340C,IRFY340CMPOWER MOSFET 400V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY340C 0.55 8.7A CeramicIRFY340CM 0.55 8.7A CeramicHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very l
irfy340.pdf
PD - 94189IRFY340,IRFY340MPOWER MOSFET 400V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY340 0.55 8.7A GlassIRFY340M 0.55 8.7A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design achieves very low on-sta
irfy340m.pdf
IRFY340MPD - 94189IRFY340,IRFY340MPOWER MOSFET 400V, N-CHANNELTHRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) ID EyeletsIRFY340 0.55 8.7A GlassIRFY340M 0.55 8.7A GlassHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheTO-257AAefficient geometry design
irfy320c.pdf
IRFY320CDimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 400V ID = 3.3A RDS(ON) = 1.8 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX, J
irfy330c.pdf
IRFY330CDimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 400V ID = 5.5A RDS(ON) = 1.2 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX, J
irfy320.pdf
IRFY320Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42)4.6 (0.18)0.8a Hermetically sealed (0.03)TO257AB Metal Package. 3.70 Dia. Nom 1 2 3VDSS = 400V ID = 3.3A RDS(ON) = 1.8 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1)(0.039)BSC2.70 of BS, CECC and JAN, JANTX, JA
irfy330.pdf
N-CHANNEL POWER MOSFET IRFY330 BVDSS = 400V, MOSFET Transistor In A Hermetic Metal TO-257AB Package Designed For Switching, Power Supply, Motor Control and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source Voltage 400V VGS Gate Source Voltage 20V ID Tc = 25C Continuo
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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