IRFY320C Todos los transistores

 ..1. Size:11K  semelab
 irfy320c.pdf

IRFY320C Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 400V ID = 3.3A RDS(ON) = 1.8 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX, J

 7.1. Size:11K  semelab
 irfy320.pdf

IRFY320 Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 400V ID = 3.3A RDS(ON) = 1.8 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX, JA

 9.1. Size:143K  international rectifier
 irfy340cm.pdf

PD - 91290C IRFY340C,IRFY340CM POWER MOSFET 400V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY340C 0.55 8.7A Ceramic IRFY340CM 0.55 8.7A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very l

 9.2. Size:145K  international rectifier
 irfy340c.pdf

PD - 91290C IRFY340C,IRFY340CM POWER MOSFET 400V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY340C 0.55 8.7A Ceramic IRFY340CM 0.55 8.7A Ceramic HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very l

 9.3. Size:145K  international rectifier
 irfy340.pdf

PD - 94189 IRFY340,IRFY340M POWER MOSFET 400V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY340 0.55 8.7A Glass IRFY340M 0.55 8.7A Glass HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very low on-sta

 9.4. Size:143K  international rectifier
 irfy340m.pdf

IRFY340M PD - 94189 IRFY340,IRFY340M POWER MOSFET 400V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY340 0.55 8.7A Glass IRFY340M 0.55 8.7A Glass HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design

 9.5. Size:11K  semelab
 irfy310c.pdf

IRFY310C Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 400V ID = 1.2A RDS(ON) = 4.15 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX,

 9.6. Size:11K  semelab
 irfy330c.pdf

IRFY330C Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 400V ID = 5.5A RDS(ON) = 1.2 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX, J

 9.7. Size:751K  semelab
 irfy330.pdf

N-CHANNEL POWER MOSFET IRFY330 BVDSS = 400V, MOSFET Transistor In A Hermetic Metal TO-257AB Package Designed For Switching, Power Supply, Motor Control and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VDS Drain Source Voltage 400V VGS Gate Source Voltage 20V ID Tc = 25 C Continuo

 9.8. Size:11K  semelab
 irfy310.pdf

IRFY310 Dimensions in mm (inches). N-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 400V ID = 1.2A RDS(ON) = 4.15 All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX, J