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IRFY9140CM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFY9140CM

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 100 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 15.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 30 nC

Tiempo de elevación (tr): 85 nS

Conductancia de drenaje-sustrato (Cd): 600 pF

Resistencia drenaje-fuente RDS(on): 0.2 Ohm

Empaquetado / Estuche: TO-257AA

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IRFY9140CM Datasheet (PDF)

1.1. irfy9140cm.pdf Size:254K _update

IRFY9140CM
IRFY9140CM

PD - 91294D IRFY9140C, IRFY9140CM POWER MOSFET 100V, P-CHANNEL ® THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140C 0.20 Ω -15.8A Ceramic IRFY9140CM 0.20 Ω -15.8A Ceramic HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achiev

1.2. irfy9140cm.pdf Size:138K _international_rectifier

IRFY9140CM
IRFY9140CM

Provisional Data Sheet No. PD 9.1294A IRFY9140CM HEXFET POWER MOSFET P-CHANNEL -100 Volt, 0.2? HEXFET Product Summary International Rectifiers HEXFET technology is the key to Part Number BVDSS RDS(on) ID its advanced line of power MOSFET transistors. The effi- cient geometry design achieves very low on-state resis- IRFY9140CM -100V 0.2? -15.8A tance combined with high transconductance.

 1.3. irfy9140c.pdf Size:137K _international_rectifier

IRFY9140CM
IRFY9140CM

PD - 91294B IRFY9140C,IRFY9140CM POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140C 0.20 ? -15.8A Ceramic IRFY9140CM 0.20 ? -15.8A Ceramic HEXFET MOSFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very low

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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