IRFY9140M Todos los transistores

 

IRFY9140M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFY9140M

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 100 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 15.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 60 nC

Tiempo de elevación (tr): 85 nS

Conductancia de drenaje-sustrato (Cd): 600 pF

Resistencia drenaje-fuente RDS(on): 0.2 Ohm

Empaquetado / Estuche: TO-257AA

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IRFY9140M Datasheet (PDF)

1.1. irfy9140m.pdf Size:279K _update

IRFY9140M
IRFY9140M

PD - 94197C IRFY9140, IRFY9140M POWER MOSFET 100V, P-CHANNEL ® THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140 0.20 Ω -15.8A Glass IRFY9140M 0.20 Ω -15.8A Glass HEXFET® MOSFET technology is the key to International TO-257AA Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very

2.1. irfy9140x.pdf Size:11K _update

IRFY9140M

IRFY9140X Dimensions in mm (inches). P-Channel MOSFET in 10.6 (0.42) 4.6 (0.18) 0.8 a Hermetically sealed (0.03) TO257AB Metal Package. 3.70 Dia. Nom 1 2 3 VDSS = 100V ID = 15.8A RDS(ON) = 0.2Ω Ω Ω Ω All Semelab hermetically sealed products can be 1.0 processed in accordance with the requirements 2.54 (0.1) (0.039) BSC 2.70 of BS, CECC and JAN, JANTX,

2.2. irfy9140cm.pdf Size:254K _update

IRFY9140M
IRFY9140M

PD - 91294D IRFY9140C, IRFY9140CM POWER MOSFET 100V, P-CHANNEL ® THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140C 0.20 Ω -15.8A Ceramic IRFY9140CM 0.20 Ω -15.8A Ceramic HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achiev

 2.3. irfy9140cm.pdf Size:138K _international_rectifier

IRFY9140M
IRFY9140M

Provisional Data Sheet No. PD 9.1294A IRFY9140CM HEXFET POWER MOSFET P-CHANNEL -100 Volt, 0.2? HEXFET Product Summary International Rectifiers HEXFET technology is the key to Part Number BVDSS RDS(on) ID its advanced line of power MOSFET transistors. The effi- cient geometry design achieves very low on-state resis- IRFY9140CM -100V 0.2? -15.8A tance combined with high transconductance.

2.4. irfy9140c.pdf Size:137K _international_rectifier

IRFY9140M
IRFY9140M

PD - 91294B IRFY9140C,IRFY9140CM POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140C 0.20 ? -15.8A Ceramic IRFY9140CM 0.20 ? -15.8A Ceramic HEXFET MOSFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The TO-257AA efficient geometry design achieves very low

 2.5. irfy9140.pdf Size:223K _international_rectifier

IRFY9140M
IRFY9140M

PD - 94197A IRFY9140,IRFY9140M IRFY9140,IRFY9140M IRFY9140,IRFY9140M IRFY9140,IRFY9140M IRFY9140,IRFY9140M POWER MOSFET 100V, P-CHANNEL POWER MOSFET 100V, P-CHANNEL POWER MOSFET 100V, P-CHANNEL POWER MOSFET 100V, P-CHANNEL POWER MOSFET 100V, P-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY THRU-HOLE (TO-257AA) HEXFET MOSFET TECHN

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