IRFZ14PBF Todos los transistores

 

IRFZ14PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFZ14PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 43 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 10 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 11 nC

Tiempo de elevación (tr): 50 nS

Conductancia de drenaje-sustrato (Cd): 160 pF

Resistencia drenaje-fuente RDS(on): 0.2 Ohm

Empaquetado / Estuche: TO-220AB

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IRFZ14PBF Datasheet (PDF)

1.1. irfz14pbf.pdf Size:875K _update

IRFZ14PBF
IRFZ14PBF

PD - 94959 IRFZ14PbF • Lead-Free www.irf.com 1 01/29/04 IRFZ14PbF 2 www.irf.com IRFZ14PbF www.irf.com 3 IRFZ14PbF 4 www.irf.com IRFZ14PbF www.irf.com 5 IRFZ14PbF 6 www.irf.com IRFZ14PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A -

1.2. irfz14pbf.pdf Size:2040K _international_rectifier

IRFZ14PBF
IRFZ14PBF

PD - 94959 IRFZ14PbF Lead-Free 01/29/04 Document Number: 91289 www.vishay.com 1 IRFZ14PbF Document Number: 91289 www.vishay.com 2 IRFZ14PbF Document Number: 91289 www.vishay.com 3 IRFZ14PbF Document Number: 91289 www.vishay.com 4 IRFZ14PbF Document Number: 91289 www.vishay.com 5 IRFZ14PbF Document Number: 91289 www.vishay.com 6 IRFZ14PbF TO-220AB Package Outline Dime

 4.1. irfz14l irfz14s irfz14spbf.pdf Size:324K _update

IRFZ14PBF
IRFZ14PBF

IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition • Advanced Process Technology RDS(on) ()VGS = 10 V 0.20 • Surface Mount (IRFZ14S, SiHFZ14S) Qg (Max.) (nC) 11 • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L) • 175 °C Operating Temperature Qgs (nC) 3.1 • Fast Sw

4.2. irfz14s.pdf Size:234K _international_rectifier

IRFZ14PBF
IRFZ14PBF

PD - 9.890A IRFZ14S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ14S) Low-profile through-hole (IRFZ14L) 175C Operating Temperature RDS(on) = 0.20? Fast Switching G ID = 10A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Th

 4.3. irfz14.pdf Size:167K _international_rectifier

IRFZ14PBF
IRFZ14PBF

4.4. irfz14s-l.pdf Size:185K _international_rectifier

IRFZ14PBF
IRFZ14PBF

PD - 9.890A IRFZ14S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ14S) Low-profile through-hole (IRFZ14L) 175C Operating Temperature RDS(on) = 0.20? Fast Switching G ID = 10A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Th

 4.5. irfz14a.pdf Size:435K _samsung

IRFZ14PBF
IRFZ14PBF

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology ? RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature A Lower Leakage Current : 10 (Max.) @ VDS = 60V Lower RDS(ON) : 0.097 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol

4.6. irfz14 sihfz14.pdf Size:1583K _vishay

IRFZ14PBF
IRFZ14PBF

IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available 175 C Operating Temperature RDS(on) (?)VGS = 10 V 0.20 RoHS* Fast Switching Qg (Max.) (nC) 11 COMPLIANT Ease of Paralleling Qgs (nC) 3.1 Qgd (nC) 5.8 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-2

4.7. irfz14s irfz14l sihfz14s sihfz14l.pdf Size:333K _vishay

IRFZ14PBF
IRFZ14PBF

IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition Advanced Process Technology RDS(on) (?)VGS = 10 V 0.20 Surface Mount (IRFZ14S, SiHFZ14S) Qg (Max.) (nC) 11 Low-Profile Through-Hole (IRFZ14L, SiHFZ14L) 175 C Operating Temperature Qgs (nC) 3.1 Fast Switching Qgd (nC)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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