IRFZ20PBF Todos los transistores

 

IRFZ20PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFZ20PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 40 W

Tensión drenaje-fuente (Vds): 50 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 12 nC

Tiempo de elevación (tr): 45 nS

Conductancia de drenaje-sustrato (Cd): 250 pF

Resistencia drenaje-fuente RDS(on): 0.1 Ohm

Empaquetado / Estuche: TO-220AB

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IRFZ20PBF Datasheet (PDF)

1.1. irfz20pbf.pdf Size:1837K _update

IRFZ20PBF
IRFZ20PBF

IRFZ20, SiHFZ20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Extremely Low RDS(on) VDS (V) 50 • Compact Plastic Package RDS(on) ()VGS = 10 V 0.10 • Fast Switching Qg (Max.) (nC) 17 • Low Drive Current Qgs (nC) 9.0 • Ease of Paralleling Qgd (nC) 3.0 • Excellent Temperature Stability Configuration Single • Parts Per Million Quality • Compliant to R

4.1. irfz20-22-fi.pdf Size:489K _st2

IRFZ20PBF
IRFZ20PBF

 5.1. irfz24nspbf.pdf Size:672K _update

IRFZ20PBF
IRFZ20PBF

PD - 95147 IRFZ24NS/LPbF HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRFZ24NS) D VDSS = 55V Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature RDS(on) = 0.07Ω Fast Switching G Fully Avalanche Rated Lead-Free ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

5.2. irfz24npbf.pdf Size:242K _update

IRFZ20PBF
IRFZ20PBF

 IRFZ24NPbF ® l Advanced Process Technology D l Dynamic dv/dt Rating l 175°C Operating Temperature DSS l Fast Switching l Fully Avalanche Rated DS(on) Ω G l Lead-Free Description D S Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-res

 5.3. irfz24pbf.pdf Size:1229K _update

IRFZ20PBF
IRFZ20PBF

IRFZ24, SiHFZ24 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 • 175 °C Operating Temperature RDS(on) ()VGS = 10 V 0.10 • Fast Switching Qg (Max.) (nC) 25 • Ease of Paralleling Qgs (nC) 5.8 Qgd (nC) 11 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Third generatio

5.4. irfz24l irfz24s irfz24spbf.pdf Size:448K _update

IRFZ20PBF
IRFZ20PBF

IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 • Advanced Process Technology RDS(on) ()VGS = 10 V 0.10 • Surface Mount (IRFZ24S, SiHFZ24S) Qg (Max.) (nC) 25 • Low-ProfileThrough-Hole (IRFZ24L, SiHFZ24L) • 175 °C Operating Temperature Qgs (nC) 5.8 • Fast Sw

 5.5. irfz24n 1.pdf Size:53K _philips

IRFZ20PBF
IRFZ20PBF

Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 17 A features very low on-state re

5.6. irfz24vs.pdf Size:123K _international_rectifier

IRFZ20PBF
IRFZ20PBF

PD - 94182 IRFZ24VS IRFZ24VL HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 60V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 60m? Fast Switching G Fully Avalanche Rated ID = 17A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to

5.7. irfz1x irfz2x irfz3x irfz4x.pdf Size:43K _international_rectifier

IRFZ20PBF

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5.8. irfz24ns.pdf Size:159K _international_rectifier

IRFZ20PBF
IRFZ20PBF

PD - 9.1355B IRFZ24NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175C Operating Temperature RDS(on) = 0.07? Fast Switching G Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-res

5.9. irfz24n 1.pdf Size:53K _international_rectifier

IRFZ20PBF
IRFZ20PBF

Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 17 A features very low on-state re

5.10. irfz24n.pdf Size:123K _international_rectifier

IRFZ20PBF
IRFZ20PBF

PD - 91354A IRFZ24N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 55V 175C Operating Temperature Fast Switching RDS(on) = 0.07? Fully Avalanche Rated G Description ID = 17A S Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area

5.11. irfz24v.pdf Size:200K _international_rectifier

IRFZ20PBF
IRFZ20PBF

PD - 94156 IRFZ24V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 60m? G Fast Switching Fully Avalanche Rated ID = 17A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

5.12. irfz24s-l.pdf Size:193K _international_rectifier

IRFZ20PBF
IRFZ20PBF

PD - 9.891A IRFZ24S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ24S) Low-profile through-hole (IRFZ24L) 175C Operating Temperature RDS(on) = 0.10? Fast Switching G ID = 17A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Th

5.13. irfz24.pdf Size:166K _international_rectifier

IRFZ20PBF
IRFZ20PBF

5.14. irfz24s.pdf Size:359K _international_rectifier

IRFZ20PBF
IRFZ20PBF

PD - 9.891A IRFZ24S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ24S) Low-profile through-hole (IRFZ24L) 175C Operating Temperature RDS(on) = 0.10? Fast Switching G ID = 17A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Th

5.15. irfz24a.pdf Size:494K _samsung

IRFZ20PBF
IRFZ20PBF

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.07 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V ? Lower RDS(ON) : 0.050 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol

Otros transistores... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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