IXFN36N60 Todos los transistores

 ..1. Size:192K  ixys
 ixfk32n60 ixfn32n60 ixfk36n60 ixfn36n60.pdf

IXFK 32N60 IXFN 32N60 IXFK 36N60 IXFN 36N60 Preliminary Data VDSS ID25 RDS(on) trr IXFK/FN 36N60 600V 36A 0.18 250ns HiPerFETTM Power MOSFET IXFK/FN 32N60 600V 32A 0.25 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25 C to 150 C 600 600 V G VDGR TJ = 25 C to 150 C; RGS = 1

 7.1. Size:128K  ixys
 ixfn36n100.pdf

HiPerFETTM IXFN 36N100 V = 1000V DSS Power MOSFETs ID25 = 36A Single Die MOSFET RDS(on) = 0.24 D N-Channel Enhancement Mode G Avalanche Rated, High dv/dt, Low t rr S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 1000 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V G VGS Continuous 20 V VGSM

 9.1. Size:128K  ixys
 ixfn39n90.pdf

VDSS = 900 V IXFN 39N90 HiPerFETTM ID25 = 39 A Power MOSFETs RDS(on) = 0.22 Single MOSFET Die D trr 250 ns N-Channel Enhancement Mode G Avalanche Rated, High dv/dt, Low t rr S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) VDSS TJ = 25 C to 150 C 900 V E153432 VDGR TJ = 25 C to 150 C; RGS = 1 M 900

 9.2. Size:128K  ixys
 ixfn34n80.pdf

HiPerFETTM Power MOSFETs IXFN 34N80 VDSS = 800 V Single DieMOSFET ID25 = 34 A RDS(on) = 0.24 W N-Channel Enhancement Mode D Avalanche Rated, High dv/dt, Low trr trr 250 ns Preliminary data sheet S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B E153432 VDSS TJ = 25 C to 150 C 800 V S VDGR TJ = 25 C to 150 C; RGS = 1 MW 800 V G VGS Continuous 20 V VGSM Transi

 9.3. Size:104K  ixys
 ixfn340n07.pdf

HiPerFETTM IXFN 340N07 VDSS = 70 V Power MOSFETs ID25 = 340 A Single Die MOSFET RDS(on) = 4 m D trr 200 ns N-Channel Enhancement Mode G Avalanche Rated, High dv/dt, Low trr S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C70 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 70 V G VGS Co

 9.4. Size:570K  ixys
 ixfn34n100.pdf

IXFN 34N100 VDSS = 1000V HiPerFETTM ID25 = 34A Power MOSFETs RDS(on) = 0.28 Single Die MOSFET D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 1000 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V G VGS Continuous 20 V VGSM Tran