IRFZ24SPBF Todos los transistores

 

IRFZ24SPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFZ24SPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 60 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 17 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 25 nC

Tiempo de elevación (tr): 58 nS

Conductancia de drenaje-sustrato (Cd): 360 pF

Resistencia drenaje-fuente RDS(on): 0.1 Ohm

Empaquetado / Estuche: TO-263

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IRFZ24SPBF Datasheet (PDF)

1.1. irfz24l irfz24s irfz24spbf.pdf Size:448K _update

IRFZ24SPBF
IRFZ24SPBF

IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 • Advanced Process Technology RDS(on) ()VGS = 10 V 0.10 • Surface Mount (IRFZ24S, SiHFZ24S) Qg (Max.) (nC) 25 • Low-ProfileThrough-Hole (IRFZ24L, SiHFZ24L) • 175 °C Operating Temperature Qgs (nC) 5.8 • Fast Sw

3.1. irfz24s-l.pdf Size:193K _international_rectifier

IRFZ24SPBF
IRFZ24SPBF

PD - 9.891A IRFZ24S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ24S) Low-profile through-hole (IRFZ24L) 175C Operating Temperature RDS(on) = 0.10? Fast Switching G ID = 17A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Th

3.2. irfz24s.pdf Size:359K _international_rectifier

IRFZ24SPBF
IRFZ24SPBF

PD - 9.891A IRFZ24S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ24S) Low-profile through-hole (IRFZ24L) 175C Operating Temperature RDS(on) = 0.10? Fast Switching G ID = 17A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Th

Otros transistores... CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 
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