IRFZ44RPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFZ44RPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 110 nS

Cossⓘ - Capacitancia de salida: 920 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: TO-220AB

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IRFZ44RPBF datasheet

 ..1. Size:221K  international rectifier
 irfz44rpbf.pdf pdf_icon

IRFZ44RPBF

PD - 94823 IRFZ44RPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 60V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.028 G l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 ID = 50*A for Linear/Audio Applications S l Lead-Free Description Advanced HEXFET Power MOSFETs from Internation

 ..2. Size:1289K  vishay
 irfz44r irfz44rpbf sihfz44r.pdf pdf_icon

IRFZ44RPBF

IRFZ44R, SiHFZ44R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 60 Available Ultra Low On-Resistance RDS(on) ( )VGS = 10 V 0.028 RoHS* Dynamic dV/dt Rating COMPLIANT Qg (Max.) (nC) 67 175 C Operating Temperature Fast Switching Qgs (nC) 18 Fully Avalanche Rated Qgd (nC) 25 Drop in Replacement of the

 6.1. Size:1160K  cn vbsemi
 irfz44rp.pdf pdf_icon

IRFZ44RPBF

IRFZ44RP www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.024 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire

 7.1. Size:153K  international rectifier
 irfz44r.pdf pdf_icon

IRFZ44RPBF

PD - 93956 IRFZ44R HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.028 G Fast Switching Fully Avalanche Rated ID = 50*A Drop in Replacement of the IRFZ44 S for Linear/Audio Applications Description Advanced HEXFET Power MOSFETs from International Rectifier utilize a

MOSTRAR MÁS

Otros transistores... IRFZ44EPBF, IRFZ44ESPBF, IRFZ44L, IRFZ44NLPBF, IRFZ44NPBF, IRFZ44NSPBF, IRFZ44PBF, IRFZ44R, MMIS60R580P, IRFZ44S, IRFZ44SPBF, IRFZ44VPBF, IRFZ44VZL, IRFZ44VZPBF, IRFZ44VZSPBF, IRFZ44ZLPBF, IRFZ44ZPBF