IRFZ44RPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 94823IRFZ44RPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt Rating VDSS = 60Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.028Gl Fully Avalanche Ratedl Drop in Replacement of the IRFZ44ID = 50*Afor Linear/Audio ApplicationsSl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from Internation

IRFZ44R, SiHFZ44RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60 Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.028 RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 67 175 C Operating Temperature Fast SwitchingQgs (nC) 18 Fully Avalanche RatedQgd (nC) 25 Drop in Replacement of the

IRFZ44RPwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.024 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.028 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire

PD - 93956IRFZ44RHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.028G Fast Switching Fully Avalanche RatedID = 50*A Drop in Replacement of the IRFZ44 Sfor Linear/Audio ApplicationsDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize a

IRFZ44R, SiHFZ44RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60 Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.028 RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 67 175 C Operating Temperature Fast SwitchingQgs (nC) 18 Fully Avalanche RatedQgd (nC) 25 Drop in Replacement of the