IRFZ44VZSPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFZ44VZSPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 92 W
Tensión drenaje-fuente (Vds): 60 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 57 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Carga de compuerta (Qg): 43 nC
Tiempo de elevación (tr): 62 nS
Conductancia de drenaje-sustrato (Cd): 270 pF
Resistencia drenaje-fuente RDS(on): 0.012 Ohm
Empaquetado / Estuche: TO-263
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IRFZ44VZSPBF Datasheet (PDF)
1.1. irfz44vzl irfz44vzpbf irfz44vzspbf.pdf 
Size:301K _update
PD - 94755 IRFZ44VZ AUTOMOTIVE MOSFET IRFZ44VZS IRFZ44VZL Features HEXFET® Power MOSFET ● Advanced Process Technology D ● Ultra Low On-Resistance VDSS = 60V ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax RDS(on) = 12mΩ G Description ID = 57A Specifically designed for Automotive applications, S this HEXFET® Power MOSFE
3.1. irfz44vpbf.pdf Size:226K _update
PD - 94826A IRFZ44VPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 60V l 175°C Operating Temperature l Fast Switching RDS(on) = 16.5mΩ l Fully Avalanche Rated G l Optimized for SMPS Applications ID = 55A S l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced pro
3.2. irfz44vs.pdf Size:145K _international_rectifier
PD - 94050A IRFZ44VS IRFZ44VL HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 60V 175C Operating Temperature Fast Switching RDS(on) = 16.5m? Fully Avalanche Rated G Optimized for SMPS Applications ID = 55A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques
3.3. irfz44v.pdf Size:229K _international_rectifier
PD - 93957A IRFZ44V HEXFET Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 16.5mW G Fast Switching Fully Avalanche Rated ID = 55A Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve
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