IRFZ44ZPBF Datasheet. Equivalente

 ..1. Size:382K  international rectifier
 irfz44zlpbf irfz44zpbf irfz44zspbf.pdf

PD - 95379A IRFZ44ZPbF IRFZ44ZSPbF Features Advanced Process Technology IRFZ44ZLPbF Ultra Low On-Resistance HEXFET Power MOSFET Dynamic dv/dt Rating 175 C Operating Temperature D Fast Switching VDSS = 55V Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 13.9m G Description ID = 51A S This HEXFET Power MOSFET utilizes the latest processing techniqu

 ..2. Size:382K  international rectifier
 irfz44zpbf irfz44zspbf irfz44zlpbf.pdf

PD - 95379A IRFZ44ZPbF IRFZ44ZSPbF Features Advanced Process Technology IRFZ44ZLPbF Ultra Low On-Resistance HEXFET Power MOSFET Dynamic dv/dt Rating 175 C Operating Temperature D Fast Switching VDSS = 55V Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 13.9m G Description ID = 51A S This HEXFET Power MOSFET utilizes the latest processing techniqu

 7.1. Size:327K  international rectifier
 auirfz44zstrl.pdf

PD - 97543 AUIRFZ44Z AUTOMOTIVE GRADE AUIRFZ44ZS Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance 175 C Operating Temperature D V(BR)DSS 55V Fast Switching Repetitive Avalanche Allowed up to RDS(on) max. 13.9m Tjmax G Lead-Free, RoHS Compliant ID 51A S Automotive Qualified * D Description D Specifically

 7.2. Size:713K  infineon
 auirfz44z auirfz44zs.pdf

AUIRFZ44Z AUTOMOTIVE GRADE AUIRFZ44ZS HEXFET Power MOSFET Features Advanced Process Technology VDSS 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) max. 13.9m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 51A Lead-Free, RoHS Compliant Automotive Qualified * D Description S Specifically designed

 7.3. Size:246K  inchange semiconductor
 irfz44z.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ44Z IIRFZ44Z FEATURES Static drain-source on-resistance RDS(on) 13.9m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM

 7.4. Size:258K  inchange semiconductor
 irfz44zs.pdf

Isc N-Channel MOSFET Transistor IRFZ44ZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt