IRFZ46 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFZ46
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 150 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 120 nS
Cossⓘ - Capacitancia de salida: 960 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
Encapsulados: TO-220AB
Búsqueda de reemplazo de IRFZ46 MOSFET
- Selecciónⓘ de transistores por parámetros
IRFZ46 datasheet
..1. Size:154K international rectifier
irfz46.pdf 
Document Number 90372 www.vishay.com 1283 Document Number 90372 www.vishay.com 1284 Document Number 90372 www.vishay.com 1285 Document Number 90372 www.vishay.com 1286 Document Number 90372 www.vishay.com 1287 Document Number 90372 www.vishay.com 1288 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as
0.1. Size:375K international rectifier
irfz46zpbf irfz46zspbf irfz46zlpbf.pdf
PD - 95562A IRFZ46ZPbF IRFZ46ZSPbF Features IRFZ46ZLPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 55V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 13.6m G Lead-Free Description ID = 51A S This HEXFET Power MOSFET utilizes the latest processing techniqu
0.2. Size:333K international rectifier
irfz46l.pdf
PD - 9.922A IRFZ46S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 50V Surface Mount (IRFZ46S) Low-profile through-hole (IRFZ46L) 175 C Operating Temperature RDS(on) = 0.024 Fast Switching G ID = 72A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon
0.3. Size:245K international rectifier
auirfz46nl.pdf
PD - 96434 AUTOMOTIVE GRADE AUIRFZ46NS AUIRFZ46NL Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance V(BR)DSS D 55V l Dynamic dV/dT Rating l 175 C Operating Temperature l Fast Switching RDS(on) max. 16.5m l Fully Avalanche Rated G l Repetitive Avalanche Allowed up to Tjmax ID(Silicon Limited) 53A l Lead-Free, RoHS Compliant l Automotive Qualifi
0.4. Size:149K international rectifier
irfz46ns irfz46nl.pdf
PD - 9.1305B IRFZ46NS IRFZ46NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ46NS) D Low-profile through-hole (IRFZ46NL) VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 0.0165 Fully Avalanche Rated G Description ID = 53A Advanced HEXFET Power MOSFETs from International S Rectifier utilize advanced processing techniques to achie
0.5. Size:85K international rectifier
irfz46n.pdf
PD-91277 IRFZ46N HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 16.5m G Fast Switching Fully Avalanche Rated ID = 53A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance
0.6. Size:358K international rectifier
irfz46s.pdf
PD - 9.922A IRFZ46S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 50V Surface Mount (IRFZ46S) Low-profile through-hole (IRFZ46L) 175 C Operating Temperature RDS(on) = 0.024 Fast Switching G ID = 72A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon
0.7. Size:215K international rectifier
irfz46npbf.pdf
PD - 94952A IRFZ46NPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching RDS(on) = 16.5m G l Fully Avalanche Rated l Lead-Free ID = 53A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve
0.8. Size:375K international rectifier
irfz46zlpbf irfz46zpbf irfz46zspbf.pdf
PD - 95562A IRFZ46ZPbF IRFZ46ZSPbF Features IRFZ46ZLPbF Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 55V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 13.6m G Lead-Free Description ID = 51A S This HEXFET Power MOSFET utilizes the latest processing techniqu
0.9. Size:679K international rectifier
irfz46nlpbf.pdf
PD - 95158 IRFZ46NSPbF IRFZ46NLPbF Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ46NS) Low-profile through-hole (IRFZ46NL) D 175 C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0165 Lead-Free G Description ID = 53A Advanced HEXFET Power MOSFETs from International S Rectifier utilize advanced processing t
0.10. Size:245K international rectifier
auirfz46ns.pdf
PD - 96434 AUTOMOTIVE GRADE AUIRFZ46NS AUIRFZ46NL Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance V(BR)DSS D 55V l Dynamic dV/dT Rating l 175 C Operating Temperature l Fast Switching RDS(on) max. 16.5m l Fully Avalanche Rated G l Repetitive Avalanche Allowed up to Tjmax ID(Silicon Limited) 53A l Lead-Free, RoHS Compliant l Automotive Qualifi
0.11. Size:856K cn vbsemi
irfz46ns.pdf
IRFZ46NS www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 60 60 0.013 at VGS = 4.5 V 50 D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VGS Gate-Source
0.12. Size:246K inchange semiconductor
irfz46n.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ46N IIRFZ46N FEATURES Static drain-source on-resistance RDS(on) 16.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM
0.13. Size:258K inchange semiconductor
irfz46zs.pdf
Isc N-Channel MOSFET Transistor IRFZ46ZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt
0.14. Size:246K inchange semiconductor
irfz46z.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ46Z IIRFZ46Z FEATURES Static drain-source on-resistance RDS(on) 13.6m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM
0.15. Size:258K inchange semiconductor
irfz46ns.pdf
isc N-Channel MOSFET Transistor IRFZ46NS FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
Otros transistores... IRFZ44SPBF, IRFZ44VPBF, IRFZ44VZL, IRFZ44VZPBF, IRFZ44VZSPBF, IRFZ44ZLPBF, IRFZ44ZPBF, IRFZ44ZSPBF, IRF840, IRFZ46L, IRFZ46NLPBF, IRFZ46NPBF, IRFZ46ZLPBF, IRFZ46ZPBF, IRFZ46ZSPBF, IRFZ48, IRFZ48L
