IRFZ46ZLPBF Todos los transistores

 

IRFZ46ZLPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFZ46ZLPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 82 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 51 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 31 nC

Tiempo de elevación (tr): 63 nS

Conductancia de drenaje-sustrato (Cd): 250 pF

Resistencia drenaje-fuente RDS(on): 0.0136 Ohm

Empaquetado / Estuche: TO-262

Búsqueda de reemplazo de MOSFET IRFZ46ZLPBF

 

IRFZ46ZLPBF Datasheet (PDF)

1.1. irfz46zlpbf irfz46zpbf irfz46zspbf.pdf Size:375K _update

IRFZ46ZLPBF
IRFZ46ZLPBF

PD - 95562A IRFZ46ZPbF IRFZ46ZSPbF Features IRFZ46ZLPbF Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 55V 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 13.6mΩ G Lead-Free Description ID = 51A S This HEXFET® Power MOSFET utilizes the latest processing techniqu

3.1. irfz46zs.pdf Size:258K _inchange_semiconductor

IRFZ46ZLPBF
IRFZ46ZLPBF

Isc N-Channel MOSFET Transistor IRFZ46ZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

 4.1. irfz46npbf.pdf Size:215K _update

IRFZ46ZLPBF
IRFZ46ZLPBF

PD - 94952A IRFZ46NPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 16.5mΩ G l Fully Avalanche Rated l Lead-Free ID = 53A‡ S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

4.2. irfz46l.pdf Size:333K _update

IRFZ46ZLPBF
IRFZ46ZLPBF

PD - 9.922A IRFZ46S/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 50V Surface Mount (IRFZ46S) Low-profile through-hole (IRFZ46L) 175°C Operating Temperature RDS(on) = 0.024Ω Fast Switching G ID = 72A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon

 4.3. irfz46.pdf Size:105K _update

IRFZ46ZLPBF
IRFZ46ZLPBF



4.4. irfz46nlpbf.pdf Size:679K _update

IRFZ46ZLPBF
IRFZ46ZLPBF

PD - 95158 IRFZ46NSPbF IRFZ46NLPbF Advanced Process Technology HEXFET® Power MOSFET Surface Mount (IRFZ46NS) Low-profile through-hole (IRFZ46NL) D 175°C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0165Ω Lead-Free G Description ID = 53A Advanced HEXFET® Power MOSFETs from International S Rectifier utilize advanced processing t

 4.5. irfz46ns.pdf Size:149K _international_rectifier

IRFZ46ZLPBF
IRFZ46ZLPBF

PD - 9.1305B IRFZ46NS IRFZ46NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ46NS) D Low-profile through-hole (IRFZ46NL) VDSS = 55V 175C Operating Temperature Fast Switching RDS(on) = 0.0165? Fully Avalanche Rated G Description ID = 53A Advanced HEXFET Power MOSFETs from International S Rectifier utilize advanced processing techniques to achieve extr

4.6. irfz46n.pdf Size:85K _international_rectifier

IRFZ46ZLPBF
IRFZ46ZLPBF

PD-91277 IRFZ46N HEXFET Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 16.5m? G Fast Switching Fully Avalanche Rated ID = 53A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sil

4.7. auirfz46ns.pdf Size:245K _international_rectifier

IRFZ46ZLPBF
IRFZ46ZLPBF

PD - 96434 AUTOMOTIVE GRADE AUIRFZ46NS AUIRFZ46NL Features HEXFET® Power MOSFET l Advanced Planar Technology l Low On-Resistance V(BR)DSS D 55V l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching RDS(on) max. 16.5mΩ l Fully Avalanche Rated G l Repetitive Avalanche Allowed up to Tjmax ID(Silicon Limited) 53A l Lead-Free, RoHS Compliant l Automotive Qualifi

4.8. irfz46s.pdf Size:358K _international_rectifier

IRFZ46ZLPBF
IRFZ46ZLPBF

PD - 9.922A IRFZ46S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 50V Surface Mount (IRFZ46S) Low-profile through-hole (IRFZ46L) 175C Operating Temperature RDS(on) = 0.024? Fast Switching G ID = 72A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

4.9. irfz46.pdf Size:154K _international_rectifier

IRFZ46ZLPBF
IRFZ46ZLPBF

Document Number: 90372 www.vishay.com 1283 Document Number: 90372 www.vishay.com 1284 Document Number: 90372 www.vishay.com 1285 Document Number: 90372 www.vishay.com 1286 Document Number: 90372 www.vishay.com 1287 Document Number: 90372 www.vishay.com 1288 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as par

4.10. irfz46ns.pdf Size:258K _inchange_semiconductor

IRFZ46ZLPBF
IRFZ46ZLPBF

isc N-Channel MOSFET Transistor IRFZ46NS ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a S

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


IRFZ46ZLPBF
  IRFZ46ZLPBF
  IRFZ46ZLPBF
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: GSM4422 | GSM4412W | GSM4412 | GSM4403 | GSM4401S | GSM4248W | GSM4228 | GSM4214W | GSM4214 | GSM4210W | GSM4210 | GSM4172WS | GSM4172S | GSM4134W | GSM4134 |

 

 

 
Back to Top